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Low Energy Probes of Semiconductors

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 75))

Abstract

Since most transport processes involve states at or near the valence- and conduction-band edges, it is useful to have probes which characterize the electronic structure within this energy region. The energy region of interest corresponds to photons having energies of a few hundredths to a few tenths of an electron volt, that is, the radio to infrared frequency region of the spectrum.

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© 1989 Springer-Verlag Berlin Heidelberg

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Cohen, M.L., Chelikowsky, J.R. (1989). Low Energy Probes of Semiconductors. In: Electronic Structure and Optical Properties of Semiconductors. Springer Series in Solid-State Sciences, vol 75. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61338-8_5

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  • DOI: https://doi.org/10.1007/978-3-642-61338-8_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-51391-9

  • Online ISBN: 978-3-642-61338-8

  • eBook Packages: Springer Book Archive

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