Abstract
A novel structure model for the type C defect on Si(001) is proposed. The model is based on the assumption that the type C defect is originated from a removal of only one atom in the second layer and not a removal of two atoms on the surface. Optimized structure obtained from the first principles calculation reproduces STM images both at negative and positive sample biases.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R. E. Schlier and H. E. Farnsworth, J. Chem. Phys. 30, 917 (1959).
D. J. Chadi, Phys. Rev. Lett. 43, 43 (1979).
M. T. Yin and M. L. Cohen, Phys. Rev. B24, 2303 (1981).
J. Ihm and J. D. Joannopoulos, Phys. Rev. B24,4191 (1981).
Z. Zhu, N. Shima and M. Tsukada, Phys. Rev. B40, 11868 (1989).
R. A. Wolkow, Phys. Rev.Lett., 68, 2636 (1992).
J. Ihm, D. H. Lee, J. D. Joannopoulos, and J. J. Xiong, Phys. Rev. Lett. 51, 1872 (1983).
K. Inoue, Y. Morikawa, K. Terakura and M. Nakayama, Phys. Rev. B49, 14774 (1994).
M. Kubota and M. Murata, Phys. Rev. B49, 4810 (1994).
R. J. Hamers and U. K. Kohler, J. Vac. Sci. Technol. A7 2854 (1989).
K. C. Pandy, Proc. 7 th Intxonf. on the physics of semiconductors, ed. D. J. Chadi and W. A. Harrison (Springer Verlag, New York, 1985).
N. Roberts and R. J. Needs, Surf. Sci. 236, 112 (1990).
J. Wang, T. A. Arias, and J. D. Joannopoulos, Phys. Rev. B49, 10497 (1993).
Ph. Avouris and D. Cahill, Ultramicroscopy 42–44, 838 (1992).
Yolotsuka and I. Sumita, Ultramicroscopy 42–44 946 (1992).
M. Udagawa, Y. Umetani, H. Tanaka, M. Itoh, T. Uchiyama, Y. Watanabe, T.
H. Tochihara, T. Amakusa and M. Iwatsuki, Phys. rev. B50 12262 (1994).
T. Miyazaki, T. Uda, and K. Terakura, EMRS, Spring Meeting 1995.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Uda, T. (1996). Novel Structure Model for the Type C Defect on Si(001) Surface. In: Okiji, A., Kasai, H., Makoshi, K. (eds) Elementary Processes in Excitations and Reactions on Solid Surfaces. Springer Series in Solid-State Sciences, vol 121. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61185-8_24
Download citation
DOI: https://doi.org/10.1007/978-3-642-61185-8_24
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-64738-3
Online ISBN: 978-3-642-61185-8
eBook Packages: Springer Book Archive