Skip to main content
SpringerLink
Log in

Films with High Dielectric Constants: for Passive Capacitance

  • Chapter
Gate Dielectrics and MOS ULSIs

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 34))

  • 482 Accesses

Abstract

This chapter describes films having dielectric constants higher than SiO2 that are mainly employed for passive capacitance in DRAM memories. For background information, see Sect. 1.3.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. L.H. Parker, A.F. Tasch: IEEE Cir. Dev. Magazine (January 1990)p.17

    Google Scholar 

  2. H. Sunami, S. Asai: In Semiconductor Research, Vol. 24, ed. by J. Nishizawa (Kogya Chosakai Pub., Tokyo 1986)p.51 [in Japanese]

    Google Scholar 

  3. K. W. Böer: Survey of Semiconductor Physics (Van Nostrand Reinhold, New York 1990)

    Google Scholar 

  4. H. Shinriki, M. Nakata: IEEE Trans. ED-38, 455 (1991)

    Article  Google Scholar 

  5. E. Takeda, T. Kaga, K. Torii: In Integration Technology of Thin Ferroelectric Films, ed. by T. Shiosaki (Science Forum, Tokyo 1992) Chap. 5, Sect. 1 [in Japanese]

    Google Scholar 

  6. S. Yamamichi, T. Sakuma, K. Takemura, Y. Miyasaka: Jpn. J. Appl. Phys. 30, 2193 (1991)

    Article  ADS  Google Scholar 

  7. H. Yamaguchi, P.-Y. Lesaicherre, T. Sakuma, Y. Miyasaka, A. Ishitani, M. Y. Yoshida: Jpn. J. Appl. Phys. 32,4069 (1993)

    Article  ADS  Google Scholar 

  8. C.S. Hwang, S.D. Park, C.S. Kang, H.-J. Cho, H.-K. Kang, S.T. Ahn, M.Y. Lee: Jpn. J. Appl. Phys. 34, 5178 (1995)

    Article  ADS  Google Scholar 

  9. E. Fujii, Y. Uemoto, S. Hayashi, T. Nasu, Y. Shimada, A. Matsuda, M. Kibe, M. Azuma, T. Ohtsuki, G. Kano, M. Scott, L.D. McMillian, C.A. Paz de Araujo: IEEE IEDM (1992) Digest p.267

    Google Scholar 

  10. T. Horikawa, N. Mikami, T. Makita, J. Tanimura, M. Kataoka, K. Sato, M. Nunoshita: Jpn. J. Appl. Phys. 32, 4126 (1993)

    Article  ADS  Google Scholar 

  11. T. Kawahara, M. Yamamura, T. Makita, J. Naka, A. Yuuki, N. Mikami, K. Ono: Jpn. J. Appl. Phys. 33, 5129 (1994)

    Article  ADS  Google Scholar 

  12. M. Shimizu, T. Katayama, M. Sugiyama, T. Shiosaki, Jpn. J. Appl. Phys. 32, 4074 (1993)

    Article  ADS  Google Scholar 

  13. R. Khamankar, J. Kim, B. Jiang, C. Sudhama, P. Maniar, R. Moazzami, R. Jones, J. Lee: IEEE IEDM (1994) Digest p.337

    Google Scholar 

  14. T. Mihara, H. Watanabe, C.A. Paz de Araujo: Jpn. J. Appl. Phys. 33, 5281 (1994)

    Article  ADS  Google Scholar 

  15. Y. Ohji, T. Kusaka, I. Yoshida, A. Hiraiwa, K. Yagi, K. Mukai: IEEE IRPS (1987) Proc. p.55

    Google Scholar 

  16. K. Yoshikawa: In Thermal Silicon Dioxides and their Interfaces, ed. by K. Taniguchi, (Realize, Tokyo, 1991) Chap. 7 [in Japanese]

    Google Scholar 

  17. S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981)

    Google Scholar 

  18. K. Kobayashi, H. Miyatake, J. Mitsuhashi, M. Hirayama, T. Higaki, H. Abe: VLSI Symp. (1990) Digest p.119

    Google Scholar 

  19. F.R. Libsch, M.H. White: Solid-State Electron. 33, 105(1990)

    Article  ADS  Google Scholar 

  20. K.I. Lundström, C.H. Svensson: IEEE Trans. ED-19, 826 (1972)

    Article  Google Scholar 

  21. P.C.Y. Chen: IEEE Trans. ED-24, 584 (1977)

    Article  Google Scholar 

  22. T. Hagiwara, R. Kondo, S. Minami, T. Aoto, Y. Itoh: IEEE J. SC-15, 346 (1980)

    Google Scholar 

  23. T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, T. Tsuchiya: Symp, VLSI Circuits(1990) Digest p.101

    Google Scholar 

  24. C. Hu: In Nonvolatile Semiconductor Memories, ed. by C. Hu (IEEE Press, New York 1991) Pt.1

    Google Scholar 

  25. S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami, K. Yoshikawa: IEEE IRPS (1990) Proc. p. 132

    Google Scholar 

  26. M. Koyanagi: Submicron Devices II(Maruzen, Tokyo 1988)[in Japanese]

    Google Scholar 

  27. S. Nadahara, J. Shiozawa, K. Imai, K. Suguro, K. Yamabe: Appl. Sur. Sci. 41/42, 425 (1989)

    Article  Google Scholar 

  28. T. Watanabe, N. Goto, N. Yasuhisa, T. Yanase, T. Tanaka, S. Shinozaki: IEEE IRPS (1987) Proc. p. 50

    Google Scholar 

  29. T. T. Sheng, R.B. Marcus: J. Electrochem. Soc. 125,432(1978)

    Article  Google Scholar 

  30. F. T. Liou, S.O. Chen: IEEE Trans. ED-31, 1736(1984)

    Article  Google Scholar 

  31. Y. Ohno, T. Kaneoka, I. Ogoh, J. Mitsuhashi, M. Hirayama, T. Kato: VLSI Symp. (1988) Digest p.35

    Google Scholar 

  32. K. Ando, A. Ishitani, K. Hamano: IEEE Semicond. Interface Specialist Conf. (1990) Proc. Talk 2. 1

    Google Scholar 

  33. E. Kaplan, M. Balog, D. Frohman-Bentchkowsky: J. Electrochem. Soc. 123, 1570 (1976)

    Article  Google Scholar 

  34. S. Schiller, U. Heisig, K. Steinfelder, J. Strümpfel: Thin Solid Films 63, 369 (1979)

    Article  ADS  Google Scholar 

  35. M. Koyanagi, Y. Sakai, M. Ishihara, M. Tazunoki, N. Hashimoto: IEEE Trans. ED-27, 1596 (1980)

    Article  Google Scholar 

  36. S. Kimura, Y. Nishioka, A. Shintomi, K. Mukai: J. Electrochem. Soc. 130, 2414 (1983)

    Article  Google Scholar 

  37. T. Ito, H. Ishikawa, T. Nakamura: Thin Film Technology of VLSIs (Maruzen, Tokyo 1986)Chap.4 [in Japanese]

    Google Scholar 

  38. H. Shinriki, Y. Nishioka, Y. Ohgi, K. Mukai: IEEE IEDM (1986) Digest p.684

    Google Scholar 

  39. B.W. Shen, I.-C. Chen, S. Banerjee, G.A. Brown, J. Bohlman, P.-H. Chang, R.R. Doering: IEEE IEDM (1987) Digest p.582

    Google Scholar 

  40. M. Saitoh, T. Mori, H. Tamura: IEEE IEDM (1986) Digest p.680

    Google Scholar 

  41. T. Kato, T. Ito, M. Taguchi, T. Nakamura, H. Ishikawa: VLSI Symp. (1983) Digest p.86

    Google Scholar 

  42. S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa: IEEE IEDM (1991) Digest p.827

    Google Scholar 

  43. I.M. Ross: US Patent 2791760 (1955)

    Google Scholar 

  44. S.S. Eaton, D.B. Butler, M. Parris, D. Wilson, H. McNeillie: IEEE ISSCC (1988) Digest p. 130

    Google Scholar 

  45. J.F. Scott: 1st Pacific Rim Workshop on Applications of Ferroelectrics, Taejon, South Korea (1994)

    Google Scholar 

  46. T. Shiosaki: 12th Breakthrough Seminar, Tokyo (1994) Proc. p.5 [in Japanese]

    Google Scholar 

  47. J.F. Scott, C.A. Paz de Araujo: Science 246, 1400(1989)

    Article  ADS  Google Scholar 

  48. D. Bondurant, F. Gnadinger: IEEE Spectrum 26, 30 (July 1989)

    Article  Google Scholar 

  49. B. Raveau, C. Michel, M. Hervieu, D. Groult: Crystal Chemistry of High-T c Super-conducting Copper Oxides, Springer Ser.Mater. Sci., Vol.15 (Springer, Berlin, Heidelberg 1991)

    Google Scholar 

  50. K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa: IEEE IEDM (1991) Digest p. 823

    Google Scholar 

  51. J.F. Scott, C.A. Paz de Araujo, B.M. Melnick, L.D. McMillian, R. Zuleeg: J. Appl. Phys. 70, 382 (1991)

    Article  ADS  Google Scholar 

  52. H.N. Al-Shareef, O. Auciello, A.I. Kingon: J. Appl. Phys. 77, 2146 (1995)

    Article  ADS  Google Scholar 

  53. M.R. Poor, A.M. Hurd, C.B. Fleddermann, A. Y. Wu: MRS Proc, 200, 211 (1990)

    Article  Google Scholar 

  54. Y. Miyasaka: In Integration Technology of Thin Ferroelectric Films, ed. by T. Shiosaki (Science Forum, Tokyo 1992)Chap.2, Sect.2 [in Japanese]

    Google Scholar 

  55. P.-Y. Lesaicherre, S. Yamamichi, H. Yamaguchi, K. Takemura, H. Watanabe, K. Takashiki, K. Satoh, T. Sakuma, M. Yoshida, S. Ohnishi, K. Nakajima, K. Shibahara, Y. Miyasaka, H. Ohno: IEEE IEDM (1994) Digest p.831

    Google Scholar 

  56. R. Moazzami, C. Hu, W.H. Shepherd: IEEE IRPS(1990)Proc. p.231

    Google Scholar 

  57. Y. Furuda, N. Numata, K. Aoki, A. Nishimura: IEEEInt~ Symp. Appl. Ferroe IEE tries(1994)Proc. p. 95

    Google Scholar 

  58. T. Kuroiwa, T. Honda, H. Watarai, K. Sato: Jpn. J. Appl. Phys. 31,3025 (1992)

    Article  ADS  Google Scholar 

  59. K. Abe, S. Komatsu: Jpn. J. Appl. Phys. 31,2985 (1992)

    Article  ADS  Google Scholar 

  60. K. Kulcsar: J. Am. Ceram. Soc. 42, 343 (1959)

    Article  Google Scholar 

  61. I. H. Pratt, S. Firestore: J. Vac. Sci. Technol. 8, 256 (1971)

    Article  ADS  Google Scholar 

  62. K. Torii, T. Kaga, K. Kushida, H. Takeuchi, E. Takeda: SSDM (1991)Ext. Abstr. p.195

    Google Scholar 

  63. K. Amanuma, T. Mori, T. Hase, T. Sakuma, A. Ochi, Y. Miyasaka: Jpn. J. Appl. Phys. 32, 4150 (1993)

    Google Scholar 

  64. J.T. Evans, R. Womach: IEEE J. SC-23, 1171 (1988)

    Google Scholar 

  65. S. Y. Wu: IEEE Trans. ED-21, 499 (1974)

    Article  Google Scholar 

  66. T. Nakamura, Y. Nakao, A. Kamisawa, H. Takatsu: IEEE Int’l Symp. Appl. Ferroelectrics (1995)Proc. p. 345

    Google Scholar 

  67. T. Kunio: In Integration Technology of Thin Ferroelectric Films, ed. by T. Shiosaki (Science Forum, Tokyo 1992)Chap. 1, Sect.2 [in Japanese]

    Google Scholar 

  68. W. R. Salaneck: Ferroelectrics 4, 97 (1972)

    Article  Google Scholar 

  69. H.M. Duiker, D. Beale, J.F. Scott, C.A. Paz de Araujo, B.M. Melnick, J.D. Cuchiano, L.D. McMillian: J. Appl. Phys. 68, 5783 (1990)

    Article  ADS  Google Scholar 

  70. G. Arlt, U. Robels: Integrated Ferroelectrics 3, 343 (1993)

    Article  Google Scholar 

  71. T. Mihara, H. Yoshimori, H. Watanabe, C.A. Paz de Araujo: Jpn. J. Appl. Phys. 34, 5233 (1995)

    Article  ADS  Google Scholar 

  72. Electronics (February 18, 1988)p. 91

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Kyoto Research Laboratory, Matsushita Electronics, Inc., 19 Nishikujo-Kasugacho, Minami-ku,Kyoto, 601, Japan

    Takashi Hori Ph.D.

Authors
  1. Takashi Hori Ph.D.
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1997 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Hori, T. (1997). Films with High Dielectric Constants: for Passive Capacitance . In: Gate Dielectrics and MOS ULSIs. Springer Series in Electronics and Photonics, vol 34. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-60856-8_6

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-60856-8_6

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-64587-7

  • Online ISBN: 978-3-642-60856-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation