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Abscheidung und Charakterisierung dielektrischer Schichten

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Book cover Technologie der III/V-Halbleiter

Zusammenfassung

Dünne nichtleitende amorphe Schichten werden in der Mikroelektronik unter anderem eingesetzt als:

  • Isolationsschichten für Leiterbahnkreuzungen,

  • dielektrische Füllungen für Metall-Isolator-Metall (MIM) Kondensatoren,

  • Gate-Isolationsschicht in Feldeffekttransistoren

  • zur Passivierung von Halbleiteroberflächen und

  • zur strukturierten Abdeckung von Halbleiteroberflächen für die selektive Epi­taxie oder Dotierung.

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Authors and Affiliations

  1. Fachbereich Elektrotechnik, Gerhard-Mercator-Universität, Kommandantenstr. 60, 47057, Duisberg, Deutschland

    Werner Prost

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  1. Werner Prost
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© 1997 Springer-Verlag Berlin Heidelberg

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Prost, W. (1997). Abscheidung und Charakterisierung dielektrischer Schichten. In: Technologie der III/V-Halbleiter. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-60786-8_6

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  • DOI: https://doi.org/10.1007/978-3-642-60786-8_6

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-62804-0

  • Online ISBN: 978-3-642-60786-8

  • eBook Packages: Springer Book Archive

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