Skip to main content

Localized Electron States and Excitons in Heterostructures

  • Chapter
Superlattices and Other Heterostructures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 110))

Abstract

One may suggest a variety of direct and convincing proofs for the validity of the effective mass approximation in the physics of semiconductors. Particularly elegant among them is the argumentation based on the prediction and observation of hydrogen-like states of Coulomb center-bound carriers and of the Wannier-Mott excitons. One can say without overstating the case that the physics of shallow impurity centers and excitons has had a rebirth with the development of high-quality heterostructures with microscopically thin layers of compositional materials. A need has been found for calculating Coulomb states with account for the superstructure potential, for the difference between the band parameters in adjoining layers, etc.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. G. Bastard: Phys. Rev. B 24, 4714 (1981)

    Article  CAS  Google Scholar 

  2. C. Mailhiot, Y.-C. Chang, T.C. McGill: Phys. Rev. B 26, 4449 (1982)

    Article  CAS  Google Scholar 

  3. W.T. Masselink, Y.-C. Chang, H. Morkoc: Phys. Rev. B 32, 5190 (1985)

    Article  CAS  Google Scholar 

  4. R.L. Greene, K.K. Bajaj: Phys. Rev. B 31, 913 (1985)

    Article  CAS  Google Scholar 

  5. S. Chaudhuri: Phys. Rev. B 28, 4480 (1983)

    Article  CAS  Google Scholar 

  6. H. Chen, S. Zhou: Phys. Rev. B 36, 9581 (1987)

    Article  Google Scholar 

  7. E.L. Ivchenko, A.V. Kavokin: Fiz. Tekh. Poluprovodn. 25, 1780 (1991) [Sov. Phys. - Semicond. 25, 1070 (1991)]

    CAS  Google Scholar 

  8. N.F. Gashimzade, E.L. Ivchenko, V.A. Kosobukin: Fiz. Tekh. Poluprovodn. 23, 839 (1989) [Sov. Phys. - Semicond. 23, 529 (1989)]

    CAS  Google Scholar 

  9. R.L. Greene, K.K. Bajaj: Solid State Commun. 45, 831 (1983)

    Article  CAS  Google Scholar 

  10. U. Ekenberg, M. Altarelli: Phys. Rev. B 35, 7585 (1987)

    Article  CAS  Google Scholar 

  11. A. Chomette, B. Lambert, D. Deveaud, F. Clerot, A. Regreny, G. Bastard: Europhys. Lett. 4, 461 (1987)

    Article  CAS  Google Scholar 

  12. D.A. Kleinman: Phys. Rev. B 28, 871 (1983)

    Article  CAS  Google Scholar 

  13. H.W. van Kesteren, E.C. Cosman, W.A.J.A. van der Poel, C.T. Foxon: Phys. Rev. B 41, 5283 (1990)

    Article  Google Scholar 

Shallow Impurities

  • Greene R.L., K.K. Bajaj: Energy levels of hydrogenic impurity states in GaAs-Ga1-xAlxAs quantum well structures. Solid State Commun. 45, 825 (1983)

    Article  CAS  Google Scholar 

  • Holtz P.O., Q.X. Zhao, A.C. Ferreira, B. Monemar, M. Sundaram, J.L. Merz, A.C. Gossard: Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells. Phys.Rev. B 48, 8872 (1993)

    Google Scholar 

  • Lane P., R.L. Greene: Shallow donors in multiple-well GaAs-Ga1-xAlxAs heterostructures. Phys. Rev. B 33, 5871 (1985)

    Google Scholar 

  • Latgé A., N. Porras-Montenegro, L.E. Oliveira: ls-2p± infrared-absorption spectra of donor-doped quantum wells under electric and magnetic fields, Phys. Rev. B 51, 13344 (1995)

    Google Scholar 

  • Liu Z., D. Ma: Energy spectra of donors in GaAs-Ga1-xAlxAs superlattices. J. Phys. C 19, 2757 (1986)

    Google Scholar 

  • MacDonald A.H., D.S. Ritchie: Hydrogenic energy levels in two dimensions at arbitrary magnetic fields. Phys. Rev. B 33, 8336 (1986)

    Google Scholar 

  • Pasquarello A., L.C. Andreani, R. Buczko: Binding energies of excited shallow acceptor states in GaAs/Ga1-x Alx As quantum wells. Phys. Rev. B 40, 5602 (1989)

    Google Scholar 

  • Tanaka K., M. Nagaoka, T. Yamabe: Binding energy of the impurity level in the Ga1-xAlxAs-GaAs-Ga1-y Aly As supperlattice. Phys. Rev. B 28, 7068 (1983)

    Google Scholar 

  • Zhu J.-L.: Coupling between a donor potential and quantum wells: effect on binding energies. Phys. Rev. B 40, 10529 (1989)

    Google Scholar 

Excitons

  • Andreani L.C., A. Pasquarello: Accurate theory of excitons in GaAs-Ga1-xAxAs quantum wells. Phys. Rev. B 42, 8928 (1990)

    Google Scholar 

  • Bastard G., E.E. Mendez, L.L. Chang, L. Esaki: Exciton binding energy in quantum wells. Phys. Rev. B 26, 1974 (1982)

    Google Scholar 

  • Bauer G.E.W., T. Ando: Exciton mixing in quantum wells. Phys. Rev. B 38, 6015 (1988)

    Google Scholar 

  • Blackwood E., M.J. Snelling, R.T. Harley, S.R. Andrews, C.T.B. Foxon: Exchange interaction of excitons in GaAs heterostructures. Phys. Rev. B 50, 14246 (1994)

    Google Scholar 

  • Chao C.Y.-P., S.L. Chuang: Momentum-space solution of exciton excited states and heavy-hole-light-hole mixing in quantum wells. Phys.Rev. B 48, 8210 (1993)

    Google Scholar 

  • Dawson P., K.J. Moore, G. Duggan, H.I. Ralph, C.T.B. Foxon: Unambiguous observation of the 2s state of the light- and heavy-hole excitons in GaAs-(AlGa)As multiple-quantum-well structures. Phys. Rev. B 34, 6007 (1986)

    Google Scholar 

  • Del Sole A., A. D’Andrea, A. Lapiccirella (eds.): Excitons in Confined Systems, Springer Proc. Phys., Vol.25 (Springer, Berlin, Heidelberg 1988)

    Google Scholar 

  • Dingle R., W. Wiegmann, C.H. Henry: Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures. Phys. Rev. Lett. 33, 827 (1974)

    Article  CAS  Google Scholar 

  • Greene R.L., K.K. Bajaj, D.E. Phelps: Energy levels of Wannier excitons in GaAs-Gaj1-xAlxAs quantum-well structures. Phys. Rev. B 29, 1807 (1984)

    Google Scholar 

  • Greene R.L., K.K. Bajaj: Binding energies of Wannier excitons in GaAs-Gaj1-xAlxAs quantum-well structures in a magnetic field. Phys. Rev. B 31, 6498 (1985)

    Google Scholar 

  • Jiang T.-F.: An alternative approach to exciton binding energy in a GaAs-AlxGaj1-xAs quantum well. Solid State Commun. 50, 589 (1984)

    Article  CAS  Google Scholar 

  • Kavokin A.V., A.I. Nesvizhskii, R.P. Seisyan: Exciton in a semiconductor quantum well subjected to a strong magnetic field. Fiz. Tekh. Poluprovodn. 27, 977 (1993) [Sov. Phys. - Semiconductors 27, 530 (1993)]

    Google Scholar 

  • Koteles E.S., J.Y. Chi: Experimental exciton binding energies in GaAs/AlxGaj1-xAs quantum wells as a function of well width. Phys. Rev. B 37, 6332 (1988)

    Google Scholar 

  • Matsuura M., Y. Shinozuka: Excitons in type-II quantum-well systems: binding of the spatially separated electron and hole. Phys. Rev. B 38, 9830 (1988)

    Google Scholar 

  • Miller R.C., D.A. Kleinman, W.T. Tsang, A.C. Gossard: Observation of the excited level of excitons in GaAs quantum wells. Phys. Rev. B 24, 1134 (1981)

    Google Scholar 

  • Pikus F.G.: Exciton in quantum wells with a two dimensional electron gas. Fiz. Tekh. Poluprovodn. 26, 43 (1992) [Sov. Phys. - Semicond. 26, 26 (1992)]

    Google Scholar 

  • Priester C., G. Allan, M. Lannoo: Wannier excitons in GaAs-Ga1-xAlxAs quantumwell structures. Influence of the effective-mass mismatch. Phys. Rev. B 30, 7302 (1984)

    Google Scholar 

  • Rashba E.I., M.D. Sturge (eds.): Excitons (North-Holland, Amsterdam 1982)

    Google Scholar 

  • Weisbusch C., R.C. Miller, R. Dingle, A.C. Gossard, W. Wiegmann: Intrinsic radiative recombination from quantum states in GaAs-AlxGa1-xAs multi-quantum well structures. Solid State Commun. 37, 219 (1981)

    Article  Google Scholar 

  • Song K.S., R.T. Williams: Self-Trapped Excitons, 2nd edn., Springer Ser. Solid-State Sci., Vol.105 (Springer, Berlin, Heidelberg 1996)

    Google Scholar 

  • Zhu B., K. Huang: Effect of valence-band hybridization on the exciton spectra in GaAs-Ga1-xAlxAsquantum wells. Phys. Rev. B 36, 8102 (1987)

    Google Scholar 

Biexcitons

  • Charbonneau S., T. Steiner, M.L.W. Thewalt, E.S. Koteles, I.Y. Chi, B. Elman: Optical investigation of biexcitons and bound excitons in GaAs quantum wells. Phys. Rev. B 38, 3583 (1988)

    Google Scholar 

  • Miller R.C., D.A. Kleinman, A.C. Gossard, O. Munteanu: Biexcitons in GaAs quantum wells. Phys. Rev. B 25, 6545 (1982)

    Article  CAS  Google Scholar 

  • Reynolds D.C., K.K. Bajaj, C.E. Stutz, R.L. Jones, W.M. Theis, P.W. Yu, K.R. Evans: Binding energies of biexcitons in AlxGaj_xAs/GaAs multiple quantum wells. Phys. Rev. B 40, 3340 (1989)

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1997 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Ivchenko, E.L., Pikus, G.E. (1997). Localized Electron States and Excitons in Heterostructures. In: Superlattices and Other Heterostructures. Springer Series in Solid-State Sciences, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-60650-2_5

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-60650-2_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-64493-1

  • Online ISBN: 978-3-642-60650-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics