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Impurities

  • Isaak M. Tsidilkovski
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 116)

Abstract

It is wise to study peculiarities of the electron spectrum in gapless semiconductors at low temperatures where the mean thermal energy of charge carriers does not exceed the electron characteristics: the Bohr energy, the Fermi energy, and energy spacings between bands (levels). In accordance with (3.7), the concentration ni of intrinsic charge carriers obeying the quadratic dispersion relation near the degeneracy point of bands of a gapless semiconductor should drop in keeping with the ni ∞ T3/2 law1 as the temperature is lowered to T → 0. Numerous investigations of the Hall effect performed on purest HgTe and ∞-Sn crystals reveal, however, that for T ≤ 10 K a marked deviation from the T3/2 law is observed, with the electron concentration tending to a constant value n0 as T → 0. The limiting residual concentration for various crystals is approximately n0 ≤ 1 · 1015 cm-3. One can postulate that impurities represent one of the possible causes for the existence of the residual electron concentration. For this reason let us briefly discuss the impurity-induced changes in the electron spectrum of an ideal crystal.

Keywords

Conduction Band Valence Band Fermi Level Impurity Atom Impurity Center 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • Isaak M. Tsidilkovski
    • 1
  1. 1.Institute of Metal PhysicsUral Division of Russian Academy of SciencesEkaterinburgRussia

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