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Fermi-Liquid Versus Pseudogap Behaviors in Filling-Control Transition-Metal Oxides

  • A. Fujimori
  • T. Yoshida
  • A. Ino
  • T. Mizokawa
  • C. Kim
  • Z.-X. Shen
  • Y. Taguchi
  • T. Katsufuji
  • Y. Tokura
  • H. Eisaki
  • S. Uchida
  • K. Kishio
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 125)

Abstract

Comparative photoemission studies of Lai1− x Sr x TiO3+y/2 (LSTO) and La2−x Sr x CuO4 (LSCO) have revealed contrasting behaviors in their low-energy electronic properties as the system approaches a filling-control Mott transition from the metallic side. In LSTO and overdoped LSCO, the chemical potential shift, the spectral density of states at the chemical potentialμ and the quasi-particle density atμ can be consistently analyzed within Fermi-liquid theory. In underdoped LSCO, on the other hand, the Fermi-liquid picture breaks down and a relatively wide (~100 meV) pseudogap is opened atμ in the density of states, in addition to a smaller leading-edge shift of ~ 10 meV aroundk ~ (π, 0) in angle-resolved photoemission spectra. The two energy scales increase with decreasing hole concentration x. The larger energy scale is probably associated with antiferromagnetic short-range order while the smaller one is attributed to the spin-gap formation or superconducting fluctuations.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1999

Authors and Affiliations

  • A. Fujimori
    • 1
  • T. Yoshida
    • 1
  • A. Ino
    • 1
  • T. Mizokawa
    • 1
  • C. Kim
    • 2
  • Z.-X. Shen
    • 2
  • Y. Taguchi
    • 3
  • T. Katsufuji
    • 3
  • Y. Tokura
    • 3
  • H. Eisaki
    • 4
  • S. Uchida
    • 4
  • K. Kishio
    • 4
  1. 1.Department of PhysicsUniversity of TokyoBunkyo-ku, TokyoJapan
  2. 2.Department of Applied Physics and Stanford Synchrotron Radiation LaboratoryStanford UniversityStanfordUSA
  3. 3.Department of Applied PhysicsUniversity of TokyoBunkyo-ku, TokyoJapan
  4. 4.Department of SuperconductivityUniversity of TokyoBunkyo-ku, TokyoJapan

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