Summary
A new parallel-field silicon Hall microsensor with dramatically improved magnetosensitivity is investigated experimentally. For the first time this result is achieved by an electrical variation both of the geometrical correction factor and the thickness in the magnetic-field direction of the device. The operating principle involves the controlling of the curvilinear majority current trajectory using unexpectedly a minority carrier injection without reducing the Hall coefficient. With an injection of only 10 µA an increasing of the output voltage of over 50 % is reached.
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© 2001 Springer-Verlag Berlin Heidelberg
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Roumenin, C., Nikolov, D., Ivanov, A., Mihailova, C. (2001). A New Highly Sensitive Parallel — Field Hall Microsensor. In: Obermeier, E. (eds) Transducers ’01 Eurosensors XV. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-59497-7_36
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DOI: https://doi.org/10.1007/978-3-642-59497-7_36
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-42150-4
Online ISBN: 978-3-642-59497-7
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