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Nitride Semiconductors and Devices pp 149–190Cite as

Defects and Doping

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 32))

Abstract

Point defects, unless they are neutral, manifest themselves as background doping or autodoping, and complicate attempts to dope the semiconductor in order to control its conductivity. Moreover, defects influence the radiative-recombination efficiency with adverse impact on the LED and laser performance. Unfortunately, GaN and related materials are rich in structural defects as well as point defects such as vacancies. It is therefore imperative that we discuss doping together with native defects.

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  1. Department of Electrical Engineering, Virginia Commonwealth University, P.O. Box 843072, Richmond, VA, 23284-3072, USA

    Professor Dr. Hadis Morkoç

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  1. Professor Dr. Hadis Morkoç
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Morkoç, H. (1999). Defects and Doping. In: Nitride Semiconductors and Devices. Springer Series in Materials Science, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58562-3_5

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