Abstract
Point defects, unless they are neutral, manifest themselves as background doping or autodoping, and complicate attempts to dope the semiconductor in order to control its conductivity. Moreover, defects influence the radiative-recombination efficiency with adverse impact on the LED and laser performance. Unfortunately, GaN and related materials are rich in structural defects as well as point defects such as vacancies. It is therefore imperative that we discuss doping together with native defects.
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Morkoç, H. (1999). Defects and Doping. In: Nitride Semiconductors and Devices. Springer Series in Materials Science, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58562-3_5
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DOI: https://doi.org/10.1007/978-3-642-58562-3_5
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