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Excitons in Multi-Valley Semiconductors

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Optical Properties of III–V Semiconductors

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 120))

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Abstract

Excitons are the quasi-particles of the lowest electronic excitations in intrinsic semiconductors. This chapter summarizes the basic optical properties related to excitons in both bulk and low-dimensional semiconductors. We specially emphazise the situation in semiconductors close to the transition from a direct to an indirect-gap band structure. The dynamics of excitons in Al x Ga1−x As at the crossover point illustrate the consequences of such a multi-valley scenario. Excitonic transitions which are indirect in reciprocal as well as in real space are found in type-II superlattices. The crossover from type-I to type-II band alignment in quasi one- and two-dimensional structures can be deduced from exciton spectroscopy.

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  1. Institut für Angewandte Physik, Universität Karlsruhe, Postfach 6980, D-76128, Karlsruhe, Germany

    Professor Dr. Heinz Kalt

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© 1996 Springer-Verlag Berlin Heidelberg

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Kalt, H. (1996). Excitons in Multi-Valley Semiconductors. In: Optical Properties of III–V Semiconductors. Springer Series in Solid-State Sciences, vol 120. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58284-4_2

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  • DOI: https://doi.org/10.1007/978-3-642-58284-4_2

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