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Optical Properties of III–V Semiconductors pp 1–16Cite as

Introduction to Semiconductor Band Structures

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 120))

Abstract

This introductory chapter is intended to give some background on band structures in semiconductors. The reasons for the occurrence of electronic bands and forbidden gaps in solids are described, and some basic ideas for the theoretical treatment of the band structure including consideration of the crystal symmetry are discussed. The specific features of the band structure in zincblende-type III–V semiconductors and some general properties of multi-valley scenarios are introduced.

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Authors and Affiliations

  1. Institut für Angewandte Physik, Universität Karlsruhe, Postfach 6980, D-76128, Karlsruhe, Germany

    Professor Dr. Heinz Kalt

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  1. Professor Dr. Heinz Kalt
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© 1996 Springer-Verlag Berlin Heidelberg

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Kalt, H. (1996). Introduction to Semiconductor Band Structures. In: Optical Properties of III–V Semiconductors. Springer Series in Solid-State Sciences, vol 120. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58284-4_1

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  • DOI: https://doi.org/10.1007/978-3-642-58284-4_1

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-63527-4

  • Online ISBN: 978-3-642-58284-4

  • eBook Packages: Springer Book Archive

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