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Surface Damage Induced by Dry Etching

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Handbook of Advanced Plasma Processing Techniques

Abstract

As the size of electrical and optical devices is scaled to ever smaller dimensions, the surface condition of the devices affects the performance more dramatically. Dry etching is often used for pattern transfer for high performance devices with submicrometer dimensions. Dry etching is needed to control the directionality of the etch profile for small features. Besides vertical profile, low damage and high etch rate are also important to maintain high device performance and high throughput. Dry-etching processes, with energetic particles bombarding the samples, can induce defects in the materials that degrade device properties [1–13]. The defects generated by dry etching often are much deeper than the ion penetration range and they make damage removal difficult [14,15].

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Authors and Affiliations

  1. Department of Electrical Engineering & Computer Science 2304 EECS Bldg., University of Michigan, 1301 Beal Avenue, Ann Arbor, MI, 48109-2122, USA

    S. W. Pang

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  1. S. W. Pang
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Editors and Affiliations

  1. Sandia National Laboratories, Dept. 1313, MS 0603, PO Box 5800, NM, 87185, Albuquerque, USA

    Randy J. Shul

  2. Dept. Mat. Sci. Eng., University of Florida, 132 Rhines Hall, PO Box 116400, FL, 32611, Gainesville, USA

    Stephen J. Pearton

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Pang, S.W. (2000). Surface Damage Induced by Dry Etching. In: Shul, R.J., Pearton, S.J. (eds) Handbook of Advanced Plasma Processing Techniques. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56989-0_8

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  • DOI: https://doi.org/10.1007/978-3-642-56989-0_8

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