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Handbook of Advanced Plasma Processing Techniques pp 507–547Cite as

Ion Beam Etching of Compound Semiconductors

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Abstract

Many optical and electronic devices fabricated of compound semiconductor materials have very exacting and demanding horizontal and vertical patterning requirements. Etched-facet diode lasers require extremely smooth vertical or precisely tilted facets. Blazed optical gratings use tenth-micrometer ridges etched at an angle. Ridge optical waveguide devices, such as modulators and switches, must be etched to a precise width and depth with a minimum of etch-induced damage. These, and many other, applications require a degree of control of the etch rate and etch profile not readily available with conventional reactive ion etching or many “downstream” techniques. Ion beam etch technology was developed as a means to provide additional control of the etch process by decoupling the ion current from the ion incident energy (plasma self-bias) and pressure. This chapter reviews the foundational technology of the two principal ion beam etch methods, reactive-ion-beam etching (RIBE) and chemically assisted ion-beam etching (CAIBE), and their application to etching of compound semiconductors.

Work carried out at Sandia National Laboratories. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94A185000

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  1. Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185-0603, USA

    G. A. Vawter

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    Randy J. Shul

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    Stephen J. Pearton

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Vawter, G.A. (2000). Ion Beam Etching of Compound Semiconductors. In: Shul, R.J., Pearton, S.J. (eds) Handbook of Advanced Plasma Processing Techniques. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56989-0_12

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