Abstract
The unique role of silicon in semiconductor technology is due largely to the remarkable properties of the Si—SiO2 interface, especially the (001)-oriented interface used in most devices [1]. Although Si is crystalline and the oxide is amorphous, the interface has an extremely low density of dangling bonds or other electrically active defects. With the continual decrease of device size, the nanoscale structure of the silicon/oxide interface becomes more and more important. Yet the atomic structure of this interface is still unclear.
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Tu, Y., Tersoff, J. (2001). Structure and Energetics of the Interface Between Si and Amorphous SiO2 . In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_12
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DOI: https://doi.org/10.1007/978-3-642-56711-7_12
Publisher Name: Springer, Berlin, Heidelberg
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