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Magnetic Properties of III–V Ferromagnetic Semiconductor (Ga,Mn)As

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Materials Science in Static High Magnetic Fields

Part of the book series: Advances in Materials Research ((ADVSMATERIALS,volume 4))

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Abstract

Modern information technology utilizes the charge degree of freedom of electrons to process information in semiconductors and the spin degree of freedom to store information in magnetic materials. The next step is to explore the combination of the two degrees of freedom to look into the possibility of realizing new functionalities.

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Authors and Affiliations

  1. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan

    F. Matsukura, T. Dietl, T. Omiya, N. Akiba, D. Chiba, E. Abe, H. Hashidume, K. Takamura, Y. Ohno, T. Sakon & H. Ohno

  2. Institute for Materials Research High Field Laboratory for Superconducting Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980 8577, Japan

    M. Motokawa

Authors
  1. F. Matsukura
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  2. T. Dietl
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  3. T. Omiya
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  4. N. Akiba
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  5. D. Chiba
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  6. E. Abe
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  7. H. Hashidume
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  8. K. Takamura
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  9. Y. Ohno
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  10. T. Sakon
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  11. M. Motokawa
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  12. H. Ohno
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Editor information

Editors and Affiliations

  1. High Field Laboratory for Superconducting Materials, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan

    Kazuo Watanabe  & Mitsuhiro Motokawa  & 

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© 2002 Springer-Verlag Berlin Heidelberg

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Matsukura, F. et al. (2002). Magnetic Properties of III–V Ferromagnetic Semiconductor (Ga,Mn)As. In: Watanabe, K., Motokawa, M. (eds) Materials Science in Static High Magnetic Fields. Advances in Materials Research, vol 4. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56312-6_12

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  • DOI: https://doi.org/10.1007/978-3-642-56312-6_12

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62635-7

  • Online ISBN: 978-3-642-56312-6

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