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Nano-Optoelectronics pp 391–410Cite as

Progress in Growth and Physics of Nitride-Based Quantum Dots

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Part of the book series: NanoScience and Technology ((NANO))

Abstract

GaN-based semiconductors have received great attention because of various potential device applications including short wavelength laser diodes (LDs), light emitting diodes (LEDs), photodetectors, and electron devices [1]. Short wavelength LED are used for full-color flat display panes and illumination systems. The blue/violet LDs will be for ultra-high density optical data storage. In addition, GaN electron devices for application to high frequency and high power oscillators are now intensively investigated. GaN and related materials (i.e., InAlGaN alloy) have various unique characteristics, such as wide bandgap energy (1.8–6.2eV), possible large band discontinuity in hete-rostructures, strong polarization effects (≈ 2MV cm−1) due to piezoelectric field effects and spontaneous polarization effects, large binding energy of excitons (> 50meV), high saturation velocity (≈ 2.7 × 10 cm4s−1), and high breakdown field (≈ 2 × 106 V cm−1).

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References

  1. S. Nakamura: Science 281, 956 (1998)

    Article  Google Scholar 

  2. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda: Appl. Phys. Lett. 48, 353 (1986)

    Article  ADS  Google Scholar 

  3. S. Nakamura: Jpn. J. Appl. Phys. 30, L1705 (1991)

    Article  ADS  Google Scholar 

  4. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki: Jpn. J. Appl. Phys. 28, L2112 (1989)

    Article  ADS  Google Scholar 

  5. S. Nakamura, T. Mukai, M. Senoh, N. Iwasa: Jpn. J. Appl. Phys. 31, L139 (1992)

    Article  ADS  Google Scholar 

  6. S. Nakamura, N. Iwasa, M. Senoh, T. Mukai: Jpn. J. Appl. Phys. 31, 1258 (1992)

    Article  ADS  Google Scholar 

  7. S. Nakamura, T. Mukai: Jpn. J. Appl. Phys. 31, L1457 (1992)

    Article  ADS  Google Scholar 

  8. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama: Jpn. J. Appl. Phys. 34, L797 (1995)

    Article  ADS  Google Scholar 

  9. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto: Jpn. J. Appl. Phys. 35, L74 (1996)

    Article  ADS  Google Scholar 

  10. Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, S. Nakamura: Appl. Phys. Lett. 70, 981 (1997)

    Article  ADS  Google Scholar 

  11. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura: Appl. Phys. Lett. 70, 2822 (1997)

    Article  ADS  Google Scholar 

  12. S. Tanaka, S. Iwai, Y. Aoyagi: Appl. Phys. Lett. 69, 4096 (1996)

    Article  ADS  Google Scholar 

  13. X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi: Appl. Phys. Lett. 72, 344 (1998)

    Article  ADS  Google Scholar 

  14. K. Kawasaki, D. Yamazaki, A. Kinoshita, H. Hirayama, K. Tsutsui, Y. Aoyagi: Appl. Phys. Lett. 79, 2243 (2001)

    Article  ADS  Google Scholar 

  15. S. Tanaka, H. Hirayama, Y. Aoyagi, Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita: Appl. Phys. Lett. 71, 1299 (1997)

    Article  ADS  Google Scholar 

  16. H. Hirayama, S. Tanaka, P. Ramvall, Y. Aoyagi: Appl. Phys. Lett. 72, 1736 (1998)

    Article  ADS  Google Scholar 

  17. I.N. Stranski, L. Krastanow: Sitzungsberichte d. Akad. d. Wissenschaften in Wien, Abt. IIb, 146, 797 (1937)

    Google Scholar 

  18. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, J.L. Rouvière: Phys. Rev. B 56, R7069 (1997)

    Article  ADS  Google Scholar 

  19. B. Damilano, N. Grandjean, F. Semond, J. Massies, M. Leroux: Appl. Phys. Lett. 75, 962 (1999)

    Article  ADS  Google Scholar 

  20. J. Brown, C. Elsass, C. Poblenz, P.M. Petroff, J.S. Speck: phys. stat. sol. (b) 228, 199 (2001)

    Article  ADS  Google Scholar 

  21. B. Damilano, N. Grandjean, S. Dalmasso, J. Massies: Appl. Phys. Lett. 75, 3751 (1999)

    Article  ADS  Google Scholar 

  22. C. Adelmann, J. Simon, G. Feuillet, N.T. Pelekanos, B. Daudin, G. Fishman: Appl. Phys. Lett. 76, 1570 (2000)

    Article  ADS  Google Scholar 

  23. A. Petersson, A. Gustafsson, L. Samuelson, S. Tanaka, Y. Aoyagi: Appl. Phys. Lett. 74, 3513 (1999)

    Article  ADS  Google Scholar 

  24. M. Kuball, J. Gleize, S. Tanaka, Y. Aoyagi: Appl. Phys. Lett. 78, 987 (2001)

    Article  ADS  Google Scholar 

  25. P. Ramvall, P. Riblet, S. Nomura, Y. Aoyagi, S. Tanaka: J. Appl. Phys. 87, 3883 (2000)

    Article  ADS  Google Scholar 

  26. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J.L. Rouvière, N. Pelekanos: J. Appl. Phys. 83, 7618 (1998)

    Article  ADS  Google Scholar 

  27. J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies: Appl. Phys. Lett. 77, 2174 (2000)

    Article  ADS  Google Scholar 

  28. J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies: Appl. Phys. Lett. 79, 686 (2001)

    Article  ADS  Google Scholar 

  29. K. Tachibana, T. Someya, Y. Arakawa: Appl. Phys. Lett. 74, 383 (1999)

    Article  ADS  Google Scholar 

  30. K. Tachibana, T. Someya, Y. Arakawa, R. Werner, A. Forchel: Appl. Phys. Lett. 75, 2605 (1999)

    Article  ADS  Google Scholar 

  31. M. Miyamura, K. Tachibana, T. Someya, Y. Arakawa: J. Cryst. Growth (2002) (in print)

    Google Scholar 

  32. K. Tachibana, T. Someya, S. Ishida, Y. Arakawa: phy. stat. sol. (b) 228, 187 (2001)

    Article  ADS  Google Scholar 

  33. K. Tachibana, T. Someya, S. Ishida, Y. Arakawa: Appl. Phys. Lett. 76, 3212 (2000)

    Article  ADS  Google Scholar 

  34. Y. Arakawa, M. Nishioka, H. Nakayama, M. Kitamura: IEICE Trans. Electron. E79-C, 1487 (1996)

    Google Scholar 

  35. F. Bernardini, V. Fiorentini, D. Vanderbilt: Phys. Rev. B 56, R10024 (1997)

    Article  ADS  Google Scholar 

  36. T. Saito, Y. Arakawa: J. Cryst. Growth (2002) (in print)

    Google Scholar 

  37. P.N. Keating: Phys. Rev. 145, 637 (1966)

    Article  ADS  Google Scholar 

  38. T. Saito, Y. Arakawa: Phys. Rev. B 60, 1701 (1999)

    Article  ADS  Google Scholar 

  39. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, M. Arlery, J.L. Rouvière: MRS Internet J. Nitride Semicond. Res. 2, Article 20 (1997)

    Google Scholar 

  40. J.L. Rouvière, J. Simon, N. Pelekanos, B. Daudin, G. Feuillet: Appl. Phys. Lett. 75, 2632 (1999)

    Article  ADS  Google Scholar 

  41. K. Kim, W.R.L. Lambrecht, B. Segall: Phys. Rev. B 53, 16310 (1996)

    Article  ADS  Google Scholar 

  42. C. Pryor, J. Kim, L.W. Wang, A. Williamson, A. Zunger: J. Appl. Phys. 83, 2548 (1998)

    Article  ADS  Google Scholar 

  43. D.W. Jenkins, J.D. Dow: Phys. Rev. B 39, 3317 (1989)

    Article  ADS  Google Scholar 

  44. R.B. Lehoucq, D.C. Sorensen, C. Yang: ARPACK Users Guide (unpublished)

    Google Scholar 

  45. O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, Y. Arakawa: Appl. Phys. Lett. 76, 2361 (2000)

    Article  ADS  Google Scholar 

  46. S. Nagahama, N. Iwasa, M. Senoh, T. Matushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matumura, H. Umemoto, K. Chocho, T. Mukai: Jpn. J. Appl. Phys. 39, L647 (2000)

    Article  ADS  Google Scholar 

  47. T. Nishida, N. Kobayashi: phys. stat. sol. (a) 176, 45 (1999)

    Article  ADS  Google Scholar 

  48. N. Otsuka, A. Tsujimura, Y. Hasagawa, G. Sugahara, M. Kume, Y. Ban: Jpn. J. Appl. Phys. 39, L445 (2000)

    Article  ADS  Google Scholar 

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Authors
  1. Yasuhiko Arakawa
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Editors and Affiliations

  1. Institut für Experimentelle Physik II, Halbleiterphysik, Universität Leipzig, Linnéstrasse 5, 04103, Leipzig, Germany

    Marius Grundmann

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© 2002 Springer-Verlag Berlin Heidelberg

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Arakawa, Y. (2002). Progress in Growth and Physics of Nitride-Based Quantum Dots. In: Grundmann, M. (eds) Nano-Optoelectronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56149-8_17

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  • DOI: https://doi.org/10.1007/978-3-642-56149-8_17

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62807-8

  • Online ISBN: 978-3-642-56149-8

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