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Optical Properties of Self-Organized Quantum Dots

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Book cover Nano-Optoelectronics

Part of the book series: NanoScience and Technology ((NANO))

Abstract

The self-organized formation of semiconductor islands in the Stranski-Krasta-now growth mode has been extensively investigated since 1990, when such islands in the InGaAs/GaAs [1] and Ge/Si [2] systems were shown to be coherent and dislocation-free. The self-organized growth of QDs appeals by the conventional layer-by-layer deposition on planar substrates, the lack of non-radiative recombination due to epitaxial interfaces, typical dimensions in the 10 nm to a few 10 nm region providing for strong quantum confinement, as well as the compatibility with monolithic device integration [3]. Already 1994 [4] injection lasing based on self-organized QDs was demonstrated and afterwards continuously improved, see Chap. 1.

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    Marius Grundmann

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Heitz, R. (2002). Optical Properties of Self-Organized Quantum Dots. In: Grundmann, M. (eds) Nano-Optoelectronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56149-8_10

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