Abstract
Additional terms have to be added to the right-hand sides of the carrier balance equations for electrons and holes in order to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial distribution of the device-internal electric field initiated by an intruding ion. For small reverse biases the charge generated within the device corresponds to the total absorption of the ion’s kinetic energy. Applying a sufficiently high reverse bias a steep field peak forms which is able to propagate through the whole device with an undiminished peak height. Due to the corresponding strong avalanche multiplication a large amount of additional charge can be generated. The results obtained from our device simulations conform well to recent experimental findings
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Kabza H., Schulze H.-J. et al. (1994) Cosmic Radiation as a Cause for Power Device Failure and Possible Countermeasures. Proc. 6th IEEE in Symp. on Power Semiconductor Devices and ICs (ISPSD), Davos, Switzerland
Findeisen C., Herr E. et al. (1998) Extrapolation of cosmic ray induced failures from test to field conditions for IGBT moduls. Microelectron. Reliab. 38, 1335–1339
Maier K.H., Denker A. et al. (1998) Single event burnout of high-power diodes. Nucl. Instr. and Methods in Phys. Res. B146, 596–600
Tang H.H.K. (1996) Nuclear Physics of cosmic ray interation with semiconductor materials. IBM J. Res. Develop. 40(1)
Voss P., Maier K.H. et al. (1997) Irradiation experiments with high-voltage power devices as a possible means to predict failure rates due to cosmic rays. Proc. 9th IEEE in Symp. on Power Semiconductor Devices and ICs (ISPSD), Weimar, Germany
Selberherr S., (1984) Analysis and Simulation of Semiconductor Devices. Springer-Verlag, Wien
ISE Integrated Systems Engineering AG (1996) XXX DESSIS user manual 5.0
Ziegler J.F., Biersack J.P., Littmark U., (1985) The Stopping and Range of Ions in Solids. Pergamon Press, New York
McKay K.G., McAfee K.B. (1953) Electron Multiplication in Silicon and Germanium. Physical Review 91, 1079–1084
Morrow R., Lowke J.J. (1997) Streamer Propagation in Air. Jour. Appl. Phys. D 30, 614–627
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Kaindl, W., Sölkner, G., Wachutka, G. (2002). Modeling of Ion-Induced Charge Generation in High Voltage Diodes. In: Breuer, M., Durst, F., Zenger, C. (eds) High Performance Scientific And Engineering Computing. Lecture Notes in Computational Science and Engineering, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55919-8_41
Download citation
DOI: https://doi.org/10.1007/978-3-642-55919-8_41
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-42946-3
Online ISBN: 978-3-642-55919-8
eBook Packages: Springer Book Archive