Abstract
The introduction of low-dielectric materials as interlayer dielectrics in microchips raises important issues concerning metal/polymer adhesion, interfacial thermal stability, and (in the case of metallization via MOCVD) organometallic reactivity with the surface. An understanding of these issues in turn rests on a characterization of the chemical bonding interactions at the metal/ polymer interface. This chapter discusses the results of surface-science studies of bond formation as metal atoms (particularly Cu and Al) are deposited on polymeric substrates. The chapter begins with a consideration of trends in interfacial bond formation for deposition of first-row transition metals on chemically inert fluoropolymer substrates. The importance of metal—carbon vs. metal—fluoride bond formation is considered. In the second part of the chapter, comparisons are made between polymer interfaces formed by metal evaporation and by MOCVD. The formation and diffusion of Al—F bonds across the metal/polymer interface is addressed. The effects of polymer surface composition on the reactivity of Al and Cu MOCVD precursors are reviewed. The third portion of the chapter discusses the advantages of forming a polymer overlayer on an existing Cu substrate. The use of vinyl silane precursors to form covalently bonded interfaces between the polymer and the Cu substrate is discussed.
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Martini, D.M., Kelber, J.A. (2003). Metal/Polymer Interfacial Interactions. In: Ho, P.S., Leu, J.J., Lee, W.W. (eds) Low Dielectric Constant Materials for IC Applications. Springer Series in Advanced Microelectronics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55908-2_7
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DOI: https://doi.org/10.1007/978-3-642-55908-2_7
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