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Vapor Deposition of Low-k Polymeric Dielectrics

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Low Dielectric Constant Materials for IC Applications

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 9))

Abstract

The unifying feature of this chapter is that a thin solid film of polymer is formed by polymerization of a reactive gaseous species, which has been generated in the gas phase by thermal activation of the precursor. This process is an important alternative to the deposition of spin-on polymer dielectric thin films, because it includes a range of advantageous features. Some of these are excellent conformality over complex topography, the possibility of good film uniformity on large-diameter wafers, and environmentally safe processing due to the absence of solvents. The most important low-k polymers synthesized by this process are Parylene-N, Parylene-F, polynaphthalene, fluorinated polynaphthalene, Teflon, Teflon AF®and polyimides. The synthesis of these materials and their properties are discussed in this chapter, along with the prospects of their integration in devices of the near future.

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Authors
  1. W. N. Gill
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  2. S. Rogojevic
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  3. T. Lu
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Editor information

Editors and Affiliations

  1. Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA

    Paul S. Ho

  2. Intel Corp., MS: RA1-204, 5200 N.E. Elam Young Parkway, Hillsboro, OR, 97214, USA

    Jihperng Jim Leu

  3. Taiwan Semiconductor Manufacturing Co. (TSMC), No. 9, Creation Road 1 Science-Based Ind. Park, Hsin-chu, Taiwan

    Wei William Lee

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© 2003 Springer-Verlag Berlin Heidelberg

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Gill, W.N., Rogojevic, S., Lu, T. (2003). Vapor Deposition of Low-k Polymeric Dielectrics. In: Ho, P.S., Leu, J.J., Lee, W.W. (eds) Low Dielectric Constant Materials for IC Applications. Springer Series in Advanced Microelectronics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55908-2_4

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  • DOI: https://doi.org/10.1007/978-3-642-55908-2_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-63221-1

  • Online ISBN: 978-3-642-55908-2

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