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Quantum Mechanical Studies of Boron Clustering in Silicon

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High Performance Computing in Science and Engineering ’03

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Abstract

Boron-interstitial clusters (BICs) are known to be a key problem to controlling diffusion and activation of ultra-shallow boron implants in ULSI silicon device technology. During post-implantation annealing the self-interstitials, which had been created by the radiation damage, mediate fast transient diffusion of boron, during which stable and metastable BICs are formed. The BICs are either electrically inactive or the number of holes they can provide per number of boron atoms is significantly less than one. This causes a significant decrease in the activation rate. Therefore, sophisticated annealing strategies have to be developed to regain isolated boron substitutionals from BICs.

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Author information

Authors and Affiliations

  1. Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Budafoki út 8, H-1111, Hungary

    Péter Déak & Ádám Gali

  2. Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie, Schottkystrasse 10, 91058, Erlangen, Germany

    Peter Pichler & Heiner Ryssel

  3. Lehrstuhl für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Cauerstrasse 6, 91058, Erlangen, Germany

    Heiner Ryssel

Authors
  1. Péter Déak
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  2. Ádám Gali
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  3. Peter Pichler
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  4. Heiner Ryssel
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Editor information

Editors and Affiliations

  1. Aerodynamisches Institut der RWTH Aachen, Wuellnerstraße zw. 5 u. 7, 52062, Aachen, Germany

    Egon Krause

  2. Institut für Wissenschaftliches Rechnen, Universität Heidelberg, Im Neuenheimer Feld 368, 69120, Heidelberg, Germany

    Willi Jäger

  3. High Performance Computing Center, Stuttgart — HLRS, Allmandring 30, 70550, Stuttgart, Germany

    Michael Resch

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© 2003 Springer-Verlag Berlin Heidelberg

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Déak, P., Gali, Á., Pichler, P., Ryssel, H. (2003). Quantum Mechanical Studies of Boron Clustering in Silicon. In: Krause, E., Jäger, W., Resch, M. (eds) High Performance Computing in Science and Engineering ’03. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55876-4_28

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  • DOI: https://doi.org/10.1007/978-3-642-55876-4_28

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-40850-5

  • Online ISBN: 978-3-642-55876-4

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