Abstract
Recently a new approach was presented to determine the high-frequency electromagnetic behavior of on-chip passives and interconnects. The method solves the electric scalar and magnetic vector potentials in a prescribed gauge. The latter one is included by introducing an additional independent scalar field, whose field equation needs to be solved. This additional field is a mathematical aid that allows for the construction of a gauge-conditioned, regular matrix representation of the curl-curl operator acting on edge elements. This paper reports on the convergence properties of the new method and shows the first results of this new calculation scheme for VLSI-based structures at high frequencies. The high-frequent behavior of the substrate current, the skin effect and current crowding is evaluated.
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Meuris, P., Schoenmaker, W., Magnus, W., Maleszka, B. (2004). Ab-Initio Calculation of Substrate Currents Using Ghost Field Gauging. In: Schilders, W.H.A., ter Maten, E.J.W., Houben, S.H.M.J. (eds) Scientific Computing in Electrical Engineering. Mathematics in Industry, vol 4. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55872-6_33
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DOI: https://doi.org/10.1007/978-3-642-55872-6_33
Publisher Name: Springer, Berlin, Heidelberg
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