Abstract
A model allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the Poisson equation and the bandgap renormalization via exchange-correlation potentials, resulting in generalized (matrix-valued) Schrödinger-Poisson systems. Band structure information enters via densities and the optical response function into comprehensive simulations of Multi Quantum Well lasers. These device simulations yield valuable information on device characteristics, including effects of carrier transport, waveguiding and heating and can be used for optimization.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
T. Koprucki and U. Bandelow. KPLIB: An open tool box for the numerical treatment of k · p Schrödinger operators. Report, Weierstrass Institute for Applied Analysis and Stochastics, Mohrenstraße 39, 10117 Berlin, Germany, in preparation.
S. L. Chuang. Physics of optoelectronic Devices. Wiley & Sons, New York, 1995.
U. Bandelow, H.-Chr. Kaiser, T. Koprucki, and J. Rehberg. Spectral properties of k · p Schrödinger operators in one space dimension, submitted to Numerical Functional Analysis and Optimization.
B. A. Foreman. Elimination of spurious solutions from eight-band k·p theory. Physical Review B, 56:R12748–R12751, 1997.
H. Wenzel, G. Erbert, and P. M. Enders. Improved theory of the refractive-index change in quanturn-well lasers. IEEE Journal of Selected Topics in Quantum Electronics, 5(3):637–642, 1999.
P.M. Enders. Enhancement and spectral shift of optical gain in semiconductors from non-markovian intraband relaxation. IEEE Journal of Quantum Electronics, 33(4):580–588, 1997.
Weng W. Chow, Stephan W. Koch, and Murray Sargent III. Semiconductor-Laser Physics. Springer-Verlag, Berlin, 1994.
R. M. Dreizler and E. K. U. Gross. Density Functional Theory. Springer-Verlag, Berlin, 1990.
H.-Chr. Kaiser and J. Rehberg. About a one-dimensional stationary Schrödinger-Poisson system with Kohn-Sham potential. Zeitschrift für Angewandte Mathematik und Physik (ZAMP), 50:423–458, 1999.
H.-Chr. Kaiser and J. Rehberg. About a stationary Schrödinger-Poisson system with Kohn-Sham potential in a bounded two-or three-dimensional domain. Nonlinear Analysis, 41(1-2):33–72, May 2000.
R. Zimmermann. Many-Particle Theory of Highly Exited Semiconductors, volume 18 of Teubner-Texte zur Physik. BSB Teubner, Leipzig, 1988.
H. Gajewski et al. TESCA TWO-and three-dimensional Semiconductor Analysis package. Weierstrass Institute for Applied Analysis and Stochastics, Mohrenstraße 39, 10117 Berlin, Germany.
H. J. Wünsche, U. Bandelow, and H. Wenzel. Calculation of combined lateral and longitudinal spatial hole burning in λ/4 shifted DFB lasers. IEEE Journ. of Quant. electron., 29(6):1751–1761, 1993.
U. Bandelow, H. Gajewski, and H.-Chr. Kaiser. Modelling combined effects of carrier injection, photon dynamics and heating in Strained Multi-Quantum Well Lasers. to appear in SPIE Proc. of Physics and Simulation of Optoelectronic Devices VIII, 2000.
G. Albinus, H. Gajewski, and R. Hünlich. Thermodynamic design of energy models of semiconductor devices. Preprint 573, Weierstrass Institute for Applied Analysis and Stochastics, Mohrenstraße 39, D-10117 Berlin, Germany, 2000.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2003 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Kaiser, HC., Bandelow, U., Koprucki, T., Rehberg, J. (2003). Modelling and Simulation of Strained Quantum Wells in Semiconductor Lasers. In: Jäger, W., Krebs, HJ. (eds) Mathematics — Key Technology for the Future. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55753-8_31
Download citation
DOI: https://doi.org/10.1007/978-3-642-55753-8_31
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-62914-3
Online ISBN: 978-3-642-55753-8
eBook Packages: Springer Book Archive