Semiconductor nanostructures such as quantum wires and quantum dots are receiving wide attention as new materials for the next generation of semiconductor devices, because many device properties are expected to be improved by quantum confinement effects [1, 2]. However, by miniaturizing the geometrical structures down to ∼ 10 nm, it becomes more difficult to fabricate such fine structures. It is also harder to characterize them on a real scale of spatial resolution.
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Takahashi, T. (2003). Nanoscale Characterization of Nanostructures and Nanodevices by Scanning Probe Microscopy. In: Fujita, H. (eds) Micromachines as Tools for Nanotechnology. Microtechnology and MEMS. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55503-9_8
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