Abstract
A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts.
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Acknowledgments
The work of M. Radziunas was supported by DFG Research Center Matheon. The authors would like to thank Mark Lichtner for implementation of the numerical schemes on the parallel compute cluster.
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Radziunas, M., Čiegis, R. (2014). Modeling and Simulations of Beam Stabilization in Edge-Emitting Broad Area Semiconductor Devices. In: Wyrzykowski, R., Dongarra, J., Karczewski, K., Waśniewski, J. (eds) Parallel Processing and Applied Mathematics. PPAM 2013. Lecture Notes in Computer Science(), vol 8385. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55195-6_31
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DOI: https://doi.org/10.1007/978-3-642-55195-6_31
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