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Barittdioden

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Aktive Mikrowellendioden

Part of the book series: Halbleiter-Elektronik ((HALBLEITER,volume 9))

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Zusammenfassung

Barittdioden (engl. Akronym für barrier-injection-transit-time) sind reine Laufzeitbauelemente. Das zugrunde liegende Prinzip ist schon in den Theorien der Vakuumlaufzeitdioden entwickelt worden. So zeigte J. Müller [1] bereits 1934, daß ein raumladungsbegrenzter Strom, der zwischen zwei Elektroden fließt, zu einem negativen Hochfrequenzwiderstand führen kann. Shockley [2] übertrug 1954 diese Idee auf entsprechende Halbleiterstrukturen. Obwohl die Vorzüge auf der Hand lagen — periodische Ladungsträgerinjektion in Verbindung mit reiner Laufzeitverzögerung — gelang Coleman und Sze [3] erst 1971 die erste technologische Realisierung einer Barittdiode.

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Authors and Affiliations

  1. Lehrstuhls für Allgemeine Elektrotechnik und Angewandte Elektronik, Technischen Universität München, Deutschland

    Dr. rer. nat. Wolfgang Harth (Professor, Inhaber) & Dr.-Ing. Manfred Claassen (Professor)

Authors
  1. Dr. rer. nat. Wolfgang Harth
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  2. Dr.-Ing. Manfred Claassen
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© 1981 Springer-Verlag, Berlin, Heidelberg

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Harth, W., Claassen, M. (1981). Barittdioden. In: Aktive Mikrowellendioden. Halbleiter-Elektronik, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-52215-4_4

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  • DOI: https://doi.org/10.1007/978-3-642-52215-4_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-10203-8

  • Online ISBN: 978-3-642-52215-4

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