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Literatur
J.H. Wolfe, Jupiter, pp. 119, J.A. van Allen, Interplanetary Particles and Fields, pp. 161, Scientific American (Sept. 1975).
G.W. Singley und J.I. Vette, The AE-4 Model of the Outer Radiation Zone Environment, NSSDC 72–06, NASA Goddard SFC (August 1972).
M.J. Teage und J.I. Vette, A Model of the Trapped Electron Population for Solar Minimum, NSSDC 74–03, NASA Goddard SFC (April 1974).
M.J. Teage, K.W. Chan und J.I. Vette, A Model Environment of Trapped Electrons for Solar Maximum, NSSDC/WDC-A- RandS 76–04, NASA Goddard SFC (May 1976).
D.M. Sawyer und 1.I. Vette, AP-8 Trapped Proton Environment for Solar Maximum and Solar Minimum, NSSDC/WDC-A-RandS 76–06 (Dez. 1976 ).
J.H. Adams Jr., R. Silberberg und C.H. Tsao, Cosmic Ray Effects on Microelectronics, Part I: The Near-Earth Particle Environment, NRL-Memorandum Report 4506 (1981).
D. Bräunig, Elektronik unter Beschuß: Wie hochenergetische Strahlung Halbleiter-Bauelementen zusetzt, Berichte aus dem HMI, 1, 3 (1988).
R.D. Evans, The Atomic Nucleus, Mc Graw-Hill, New York (1965).
C.M. Davisson und R.D. Evans, Gamma-Ray Absorption Coefficients, Rev. Mod. Phys. 24 (1952) 79.
R.G. Jaeger und W. Hübner (Hrsg.), Dosimetrie und Strahlenschutz, Stuttgart: Thieme 1974.
M.J. Berger und J.M. Seltzer, Additional Stopping Power, NASA SP-3036 (1966).
A. Cole, Absorption of 20 eV to 50 000 eV Electron Beams in Air and Plastic, Rad. Res. 38 (1969) 7.
E.J. Kobetich und R. Katz, Energy Disposition by Electron Beams and S Rays, Phys. Rev. 170 (1968) 391.
J.F. Ziegler, Handbook of Stopping Cross Sections for Energetic Ions in All Elements, Pergamon Press, New York (1980).
H. Bethe und J. Ashkin, Experimental Nuclear Phys, Bd. 1, ed. E. Segré, Wiley, New York (1953).
H. Bichsel, Radiation Dosimetry, Bd. 1, ed. F.H. Attig, W.C. Roesch, Academic Press, New York (1968).
D. Bräunig, W. Fahrner, W. Gaebler und F. Wulf, Workshop: “Strahleneffekte an elektronischen Bauteilen”, HMI Berlin (Mai 1980 ).
G.D. Watkins, Radiation Damage in Semiconductors, Academic Press, New York (1965).
G.D. Watkins, Radiation Effects in Semiconducting Components, Toulouse, März 1967, J. Phys. Soc. Japan 18, Suppl. II, 22 (1963).
L. Miller, D.V. Lang und L.C. Kimerling, Capacitance Transient Spectro- scopy, Rev. Mater. Sci., 377 (1977).
G.D. Watkins und J.R. Troxell, Negative Properties for Point Defects in Silicon, Phys. Rev. Lett. 44 (1980) 593.
J.R. Srour, Short Term Annealing in Electron-Irradiated p-Type Silicon, IEEE-Trans. Nucl. Sci. 17 (Dec 1970) 118.
Comment on “ Short Term Annealing of 30 MeV Electron Damage in High Purity n-Type Silicon, IEEE-Trans. Nucl. Sci. 19 (Feb. 1972) 897.
B.L. Gregory und H.H. Sander, Transient Annealing of Defects in Irradia- ted Silicon Devices, Proc. IEEE 58 (1970) 1328.
G.D. Watkins, Radiation Damage in Semiconductors, Academic Press, New York (1964).
O.L. Curtis Jr., J.R. Srour und R.B. Rand, Recombination Studies on Gam- ma-Irradiated n-Type Silicon, J. Appl. Phys. 43 (1972) 4638.
O.L. Curtis, Explanation for the Discrepancy in Recombination Level Positions in Irradiated n-Type Ge/Reported by Various Observers, J. Appl. Phys. 30 (1965) 2094.
G.C. Messenger, A Two Level Model for Lifetime Reduction Processes in Neutron-Irradiated Silicon and Germanium, IEEE Trans. Nucl. Sci. NS-14 (1967) 88.
V.A.J. van Lint, T.M. Flanagan, R.E. Leadon, J.A. Naber und V.C. Rodgers, Mechanisms of Radiation Effects in Electronic Materials, Vol. 1, John Wiley, New York, 1980.
B.R. Gossick, Disordered Regions in Semiconductors Bombarded by Fast Neutrons, J. Appl. Phys. 30 (1959) 1214.
J.R. Srour und O.L. Curtis Jr., Short Term Annealing in Silicon Devices Following Pulsed 14 MeV Neutron Irradiation, IEEE Trans. Nucl. Sci. 19 (Dec. 1972) 362.
J.R. Srour, Stable Damage Comparisons for Neutron Irradiated Silicon, IEEE Trans. Nucl. Sci. 20 (Dec. 1973) 190.
J.J. Loferski und P. Rappaport, Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds, Phys. Rev. 111 (1958) 432.
H.J. Stein und F.L. Vook, Radiation Defects in Semiconductors, ed. F.L. Vook, Plenum Press, New York, 115 (1968).
B.L. Gregory, Minority Carrier Recombination in Neutron Irradiated Silicon, IEEE Trans. Nucl. Sci 16 (Dec. 1969) 53.
V.A.J. van Lint, G. Gigas und J. Barengoltz, Correlation of Displacement Effects Produced by Electrons, Protons and Neutrons in Silicon, IEEE Trans. Nucl. Sci. 22 (1975) 2663.
W. Shockley, Electrons and Holes in Semiconductors, D. Van Nostrand, Princeton, N.J. (1950).
V.S. Vavilov, Effects of Radiation on Semiconductors, Consultant Bureau, New York (1965).
J.L. Wirth und S.C. Rogers, The Transient Response of Transistors and Diodes to Ionizing Radiation, IEEE Trans. Nucl. Sci. 11 (Nov. 1964) 24.
T.R. Oldham und J.M. McGarrity, Ionization of Si02 by Heavy Charged Particles, IEEE Trans. Nucl. Sci. 28 (Dec. 1981) 3975.
R. Freeman und A. Holmes-Siedle, A Simple Model for Predicting Radiation Effects in MOS Devices, IEEE Trans. Nucl. Sci. 25 (1978) 1216.
R. J. Powell und G.F. Derbenwick, Vacuum Ultraviolet Radiation Effects in Si02, IEEE-NS-18 (6) (Dec. 1971) 99–105.
M. Knoll, D. Bräunig und W.R. Fahrner, Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection Experiments, IEEE Trans. Nucl. Sci., NS-29 (6) (Dec. 1982) 1471–1478.
J.R. Srour und K.Y. Chin, MOS Hardening Approaches for Low Temperature Applications, IEEE Trans. Nucl. Sci. 24 (1977) 2140.
M. Knoll, Dissertation, Generation von Oxidladungen und Phasengrenzzuständen im MOS-System durch Tunnelinjektion und ionisierende Bestrahlung,TU Berlin, FB 19 (1983).
P.S. Winokur, J.M. McGarrity und H.E. Boesch Jr., Dependance of Interface-State Buildup on Hole Generation and Transport, IEEE Trans. Nucl. Sci. NS-23 (1976) 1580.
F.B. McLean, H.E. Boesch Jr. und J.M. McGarrity, Proc. Intl. Conf.: Physics of Si02 and its Interfaces, Pergamon Press, New York 19 (1978).
C.T. Sah, Origin of Interface States and Oxide Charge Generated by Ionizing Radiations, IEEE Trans. Nucl. Sci. NS-23(6) (1976) 1563.
A.G. Revesz, Chemical and Structural Aspects of the Irradiation Behaviour of SiO2 Films on Silicon, IEEE Trans. Nucl. Sci. NS-24, (1977) 2102.
P.M. Lanahan und P.V. Dressendorfer, An Electron Spin Resonance Study of Radiation-Induced Electrically Active Paramagnetic Centers at the SiO2/Si Interface, J. Appl. Phys. 54 (1983) 1457.
K.O. Jeppson und C.M. Svensson, Negative Bias Stress of MOS Devices at High Electric Fields and Degradation of NMOS Devices, J. Appl. Phys. 48, 5 (1977) 2004.
D.L. Griscom, Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Portirradiation Build Up of Interface States in SiO2- on Si Structures, J. Appl. Phys. 58, 7 (1985) 2524.
A.S. Grove, Physics and Technology of Semiconductor Devices, John Wiley and Sons, New York (1967).
R. Bäuerlein, Strahlenschäden in Halbleitern und Halbleiter-Bauelementen, in Festkörperprobleme VIII, ed. O. Madelung, Vieweg, Pergamon Press (1968).
R.R. Brown, Proton and Electron Permanent Damage in Silicon Semiconductor Devices, Boeing Report, D2–90570 (1964).
A.G. Stanley, K.E. Martin und S. Douglas, Radiation Design Criteria Handbook, Technical Memorandum 33–763, Jet Propulsion Laboratory, Pasadena, California (Aug. 1976).
S.C. Sun und J.D. Plummer, Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces, IEEE Trans. ED-27 (1980) 1497.
K.F. Galloway, M. Gaitan und T.J. Russel, A Simple Model for Seperating Interface and Oxide Charge Effects in MOS Device Characteristics, IEEE Trans. Nucl. Sci. NS-31 (Dec. 1984) 1497.
D. Bräunig, Strahlenschäden in Halbleiterbauelementen, VDI Bildungswerk “Beschleunigertechnik”, Berlin (1982).
P.S. Winokur, J.R. Schwank, P.J. Mc Worther, P.V. Dressendorfer und D.C. Turpin, Correlating The Radiation Response of MOS Capacitors and Transistors, IEEE Trans. Nucl. Sci. 31 (1984) 1453.
C.L. Wilson und J.L. Blue, Two-Dimensional Modeling of N-Channel MOSFETs Including Radiation-Induced Interface and Oxide Charge, IEEE Trans. Nucl. Sci. NS-31 (1984) 1448.
J.R. Schwank, P.S. Winokur, P.J. Mc Worther, F.W. Sexton, P.V. Dressendorfer und D.C. Turpin, Physical Mechanisms Contributing to Device “Rebound”, IEEE Trans. Nucl. Sci. NS-31 (1984) 1434.
D. M. Long, Hardness of MOS and Bipolar Integrated Circuits, IEEE-NS-27 (6) (Dec. 1981) 1674–1679.
G.C. Messenger and M.S. Ash, The Effects of Radiation of Electronic Systems, Van Nostrand Reinhold Company, New York (1986).
M. Schlenther, D. Bräunig, M. Gärtner and F. Gliem, “In Situ” Radiation Tolerance Tests of MOS RAMS“, IEEE Trans. Nucl. Sci. NS-25 (6) (Dec. 1978) 1209.
E.L. Petersen, Tutorial Short Course, Basic Concepts on Single Event Upsets, IEEE Nucl. and Space Radiation Effects Conference, (July 1983), Gatlinburg/Tennessee.
J.H. Adams Jr., The Natural Radiation Environment Inside Spacecraft, IEEE Trans. Nucl. Sci. 29 (1982) 2095.
The Variability of Single Event Upsets Rates in the Natural Environment, IEEE Trans. Nucl. Sci. 30 (1983) 4475.
E.L. Petersen, P. Shapiro, J.H. Adams and E.A. Burke, Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices, IEEE Trans. Nucl. Sci. 29 (1982) 2055.
J.C. Pickel, Tutorial Short Course, Single Event Upset Mechanisms and Predictions, IEEE Nucl. and Space Radiation Effects Conference, (July 1983), Gatlin burg/Tennessee.
P.V. Dressendorfer,J.M. Soden, J.J. Harrington and T.V. Nordstrom, The Effects of Test Conditions on MOS Radiation-Hardness Results, IEEE Trans. Nucl. Sci. 28 (1981) 4281.
T. D. Stanley, D. Neamen, P. Dressendorfer, J. Schwank, P. Winckert, M. Ackermann, K. Jungling, C. Hawkins and W. Graunemann, The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices, IEEE-Trans. Nucl. Sci. NS-32 (1985) 3982.
D.R. Schwank und W.R. Dawes Jr., Irradiation Silicon Gate MOS Device Bias Annealing, IEEE Trans. Nucl. Sci. 30 (1983) 4100.
G.F. Derbenwick und B.L. Gregory, Design Optimization of Radiation-Hardened CMOS Integrated Circuits, IEEE Trans. Nucl. Sci. 22 (1975) 2208.
W.R. Dawes Jr., Tutorial Short Course, Radiation Effects Hardening Techniques, IEEE Nucl. and Space Radiation Effects Conference, Monterey/California (July 1985).
J.R. Adams, W.R. Dawes Jr. und T.S. Sanders, A Radiation Hardened Field Oxide, IEEE Trans. Nucl. Sci. 24 (1977) 2099.
W.S. Kim, T.M. Mnich, W.T. Corbett, R.K. Treece, A.E. Giddings und J.L. Jorgensen, Radiation-Hard Design Principles Utilized in CMOS 8085 Microprocessor Family, IEEE Trans. Nucl. Sci. 30 (1983) 4229.
B.L. Gingerich, J.M. Hermsen, J.C. Lee und J.E. Schroeder, Total Dose and Dose Rate Radiation Characterization of Epi-CMOS Radiation Hardened Memory and Microprocessor Devices, IEEE Trans. Nucl. Sci. 31 (1984) 1332.
L.W. Massengill und S.E. Diehl-Nagle, Transient Radiation Upset Simulations of CMOS Memory Circuits, IEEE Trans. Nucl. Sci. 31 (1984). 1337
D.J. Allen, F.N. Coppage, G.L. Hash, D.K. Holek und T.F. Wrobel, Gamma-Induced Leakage in Junction Field-Effect Transistors, IEEE Trans. Nucl. Sci. 31 (1984) 1487.
T. Itoh und M. Yanai, Stability of Performance and Interfacial Problems in GaAs MESFET’s, IEEE Trans. ED, 27 (1980) 1037.
C.E. Barnes, Increased Radiation Hardness of GaAs Laser Diodes at High Current, Densities, Journal of Appl. Phys. 45 (1974) 3485.
J.J. Wiczer, T.A. Fischer, L.R. Dawson, G.C. Osbourn, T.E. Zipperian und C.E. Barnes, Pulsed Irradiation of Optimized, MBE Grown, AlGaAs/GaAs Radiation Hardened Photodiodes, IEEE Trans. Nucl. Sci. 31 (1984) 1477.
D. Bräunig, Gamma-Dosis-Effekte in Halbleiterschaltungen, Carl CranzGesellschaft, Kursus B8.03, Weil/Rhein (Mai 1986 ).
S. Seltzer, Electron, Electron-Bremsstrahlung and Proton Depth-Dose Data for SpaceShielding Applications, IEEE-NS-26 (6) (Dec. 1979) 4896–4904.
S. Seltzer, Shieldose: A Computer Code for Space Shielding Radiation Dose Calculations, NBS Tech. Note 1116, US Dep. of Commerce (May 1980).
A. Holmes-Siedle und Roger Freeman, Radiation Effects Engineering Handbook, Final Report, ESA Contract 2871/76/NL/HP (April 1978).
D. Bräunig, F. Wulf, W. Gaebler und A. Boden, Richtliniezur Prüfung der Strahlungsfestigkeit elektronischer Bauteile, DFVLR TN 53/10, HMI-Nr. B 380 (1982).
D. Bräunig, W. Gaebler, W.R. Fahrner und H.G. Wagemann, GfW Handbuch für Datensammlung strahlungsgetesteter elektronischer Bauteile, TN 53/08, HMI B 248 (Nov. 1977), (inzwischen auf 6 Bände erweitert).
Halbleiter- und Festkörper-Physik
S.M. Sze, Physics of Semiconductor Devices, Wiley and Sons, New York, 2nd Edition (1981).
A.S. Grove, Physics and Technology of Semiconductor Devices, Wiley and Sons, New York (1967).
S.M. Sze, VLSI Technology, Mc Graw Hill Book Company, Singapore (1983).
Instabilities in Silicon Devices, ed. G. Barbottin und A. Vapaille, North Holland, Amsterdam, Vol. 1 (1986), Vol. 2 (1988).
C. Kittel, Einführung in die Festkörperphysik, Oldenburg Verlag, 6. Auflage, München (1986).
R. Paul, Transistoren und Thyristoren, Dr. Alfred Hüthig Verlag, Heidelberg (1977).
Bestrahlungseffekte
G. Messenger und M.S. Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold Company, New York (1986).
V.A.J. van Lint, T.M. Flanagan, R.E. Leadon, J.A. Naber und V.C. Rodgers, Mechanisms of Radiation Effects in Electronic Materials, Wiley and Sons, Vol. 1, New York (1980).
N.J.Rudie, Principles and Techniques of Radiation Hardening, Western Periodicals Company, California, 2nd Edition (1980), 3 Bände.
IEEE-Trans. Nucl. Sci. (Dez.-Ausgaben)
V.S. Vavilov, Effects of Radiation of Semiconductors, Consultants Bureau, New York (1965).
L.W. Ricketts, Fundamentals of Nuclear Hardening of Electronic Equipment, Wiley and Sons, New York (1972).
T.P. Ma und P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, Wiley and Sons, New York (1988).
J.R. Srour, Basic Mechanisms of Radiation Effects on Electronic Materials, Devices and Integrated Circuits, IEEE NSREC Short Course, Gatlinburg TN (July 1983).
J.W. Corbett, Electron Radiation Damage in Semiconductors and Metals, Academic Press, New York (1966).
Kern- und Teilchen-Physik
R.D. Evans, The Atomic Nucleus, McGraw Hill, New York (1955)
E. Ségré, Nuclei and Particles, W.A. Benjamin, New York (1965).
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Bräunig, D. (1989). Literatur. In: Wirkung hochenergetischer Strahlung auf Halbleiterbauelemente. Mikroelektronik. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-51109-7_6
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