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Field Ion Microscopy

  • Chapter
Microscopic Methods in Metals

Part of the book series: Topics in Current Physics ((TCPHY,volume 40))

Abstract

The field ion microscope, invented by Müller [4.1] in 1951, was the first instrument to reveal surfaces on the atomic level. In the years since its invention, the field ion microscope and its derivatives have proved not only remarkably simple, but also versatile, allowing important new insights about atomic behavior in many different fields of study. Recently, other techniques, first electron microscopy and subsequently scanning tunneling microscopy, have developed the ability to probe solid surfaces on a scale approaching atomic dimensions. In the hands of Crewe and his colleagues [4.2,3], scanning electron microscopy has been shown capable of revealing individual metal atoms on light substrates. However, except for some initial exploratory studies [4.4], no consistent effort to apply these methods to the characterization of surface behavior has as yet appeared. The primary contribution of electron microscopy to surface studies is being made by fixed beam methods, which are beginning to reveal the atomic arrangement of the substrate [4.5,6]. Scanning tunneling microscopy (STM) [4.7] is much the newest technique and is still undergoing rapid development. The principal application has been to the examination of surface structure [4.8,9]: even the limited work available so far has clearly revealed the complex structural features to be expected on macroscopic crystals. Neither the operating principles nor the potential of this technique are well established, but it already is evident that STM has great promise for the examination of macroscopic surfaces.

Supported by the National Science Foundation under Grant DMR 84-20751.

Guggenheim Fellow, 1984–1985

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Ernst, N., Ehrlich, G. (1986). Field Ion Microscopy. In: Gonser, U. (eds) Microscopic Methods in Metals. Topics in Current Physics, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-46571-0_4

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  • DOI: https://doi.org/10.1007/978-3-642-46571-0_4

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