Abstract
A survey of some typical physical properties of inorganic semiconducting elements and compounds (mainly intermetallics) is given in table 7/1.
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References on Semiconductors in General General
Barrer, R. M.: Diffusion in and through Solids. New York: Cambridge University Press 1950.
Buckley, H. E.: Crystal Growth. New York: John Wiley and Sons 1951.
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Shockley, W., M. Sparks and G. K. Teal: P-N Junction Transistors. Phys. Rev. vol. 83 (1951) pp. 151–162.
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Properties
Bridgers, H. E., and others. Transistor Technology vol. I (1957).
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Coblenz, A.: Semiconductor Compounds Open New Horizons. Courtesy Electronics, (Nov. 1957) pp. 146-148.
Conwell, E. M.: Properties of Silicon and Germanium. Proc. IRE vol. 40 (Nov. 1952) p. 1327, No. 11.
Debye, P. P., and E. M. Conwell: Electrical Properties of n-Type Germanium. Phys. Rev. vol. 93 (1954) pp. 693–706.
Goodman, C. H. L.: Semiconducting Compounds and the Scale of Electronegatives. Proc. Phys. Soc., Lond. B vol. 67 (1954) pp. 258–259.
Guggenheim, E. A.: Electron Spin in Semiconductors. Proc. Phys. Soc. (London) A, vol. 66 (1953) pp. 121–122.
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References on Selenium and Other Semiconductors
Aikman, O. S.: Protective Coatings Minimize Effects of Corrosion on Selenium Rectifiers. Ind. Labs. vol. 4 No. 10 (1953) pp. 114–117.
van Amstel, J. J. A. Ploos: Kleine Selenventile. Philips’ techn. Rdsch. No. 9 (1947/48) p. 267 (Eindhoven).
Brady, E. L.: Preparation and Properties of Lead Telluride. J. Electrochem. Soc. vol. 101 (1954) pp. 466–473.
Brunke, F.: Eigenschaften und Herstellung von Selen und Kupferoxydulgleichrichtern (Properties and manufacturing of selenium and copper-oxide rectifiers.) Schottky, Halbleiterprobleme vol. 1 (Braunschweig 1954) p. 135
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Cohen, J.: Semiconducting Films of Antimony. J. Appl. Phys. vol. 25 (1954) pp. 798 to 801.
Eckart, F., and A. Schmidt: Properties of Selenium Rectifiers with Various Impurity Materials. Ann. Physik, vol. 16 (1955) pp. 134–152.
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Krebs, H.: Semiconducting Materials. London 1951.
Kröger, F. A., H. J. Vink and J. van den Boomgaard: Controlled Conductivity in CdS Single Crystals. Z. phys. Chemie vol. 203, Nr. 1/2 (1954) pp. 1–72.
Mitchell, E. J. W.: Impurity Scattering in Oxide Semiconductors. Proc. Phys. Soc., Lond. (Feb. 1952) pp. 154-161.
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Nasledov, D. N., V. A. Dorin and I.M. Dikina: X-Ray Study of Selenium Films Obtained by Evaporation in Vacuum. Zhur. Tekh. Fiz. vol. 25 (1955) pp. 29–38.
Nijland, L. M.: Some Investigations on the Electrical Properties of Hexagonal Selenium. Philips Research Repts. vol. 9 (1954) pp. 259–294.
Piper, W. W.: Some Electrical and Optical Properties of Single Crystals of ZnS. Phys. Rev. vol. 92, No. 1 (1953) pp. 23–28.
Piper, W. W.: Growth of ZnS Single Crystals. J. Chem. Phys. vol. 20, No.8 (1952) p. 1343.
Poganski, S.: Low-Capacitance Se Rectifiers. A.E.G. Mitt. vol. 45 (1955) pp. 257–260.
Richter, H., W. Kulcke and H. Specht: The Structure of Amorphous Selenium. Z. Naturf. (Aug. 1932) pp. 511-532.
Rose, A.: Photoconductivity in Insulators. R. C. A. Rev. (Sept. 1951).
Rust, H. H.: Dielectric Behavior of Selenium Barrier Layers at High Temperature in the Blocking Range (German). Archiv der Elektrischen Übertragung, vol. 7, No. 11 (Nov. 1953) pp. 549–553.
Saker, E. W., and F. A. Cunnell: Intermetallic Semiconductors. Research (London) vol. 7 (1954) pp. 114–120.
Scanlon, W. W.: Interpretation of Hall Effect and Resistivity Data in PbS and Similar Binary Compound Semiconductors. Phys. Rev. (Dec. 1953) pp. 1573-1575.
Selenyi, P.: A Simple Experiment on the Origin and Prevention of Rectification by the Selenium Rectifier. Acta Phys. Hungar. vol. 3, No. 1 (1953) pp. 11–14.
Shidlovskii, M. K.: Electrical Conductivity of Amorphous Selenium in Strong Electric Fields. Zhur. Tekh. Fiz. vol. 24 (1954) pp. 837–844.
Straumaris, M. E.: Z. Krystallogr. vol.102 (1940) p. 432.
Veszi, G. A.: The Modern Single-Layer Selenium Photoelectric Cell. J. Brit. Inst. Radio Engr. vol. 13 (April 1953) pp. 183–189.
Weimer, P. K., and A. D. Cope: Photoconductivity in Amorphous Selenium. R. C. A. Rev. (Sept. 1951).
Weschlowski, J.: Bull. Int. Acad. Cracovie (Acad. pol. Sci.) vol. 6-7 A (1938) p. 290.
Zworykin, V. K., and E. G. Ramberg: Photoelectricity and its Applications. New York 1949.
References on Germanium
Anonymus: Germanium Furnace. C. and E. News (Febr. 23, 1953) p. 821.
Battey, J. F., and R. M. Baum: Energy of the High-Lying Acceptor Level in Copper-Doped Germanium. Phys. Rev. vol.94 (1954) p. 1393.
Becker, M.: Growth of Long Lifetime Germanium Crystall. Phys. Rev. vol.94 (1954) p. 1420.
Bennett, D. C., and B. Sawyer: Single Crystal of Exceptional Perfection and Uniformity by Zone Leveling. Bell Syst. Techn. Jour. vol. XXXV, No. 3 (1956), p. 637.
Birman, J. L.: On Zone Refining. J. Appl. Phys. vol.26 (1955) p. 1195.
Bösenberg, W.: Diffusion of Antimony, Arsenic and Indium in Solid Germanium. Z. Naturforsch. vol. 10a (1955) pp. 285–291.
Bradley, W. E.: The Surface-Barrier Transistor, Parts I, II, III, IV, V. Proc. IRE, vol. 41(12) (Dec. 1953) pp. 1702–1714.
Bradshaw, S. E.: Phenomena Observed in the Melting and Solidification of Germanium. J. Electrochem. Soc. vol. 101 (1954) pp. 293–297.
Brit. Pat. 703606: Purifying Germanium (Feb. 3, 1954).
Burton, J. A.: Impurity Centers in Ge and Si. Physica vol. 20, pp. 834–854.
Camp, P. R.: Resistivity Striations in Germanium-Crystals. J. Appl. Phys. vol. 25 (1954) pp. 459–463.
Chirnside, R. C., and H. J. Cluley: Germanium from Coal. G. E. C. Journal (April 1952) pp. 94-100.
Cornelison, B., and W. A. Adcock: Transistors by Grown-Diffused Technique. Wescon Meeting Aug. 21, 1957.
Czochralski, I.: Z. f. phys. Chem. 92 (1918) p. 219.
Dale, E. G., and W. L. Mefferd: Segregation Coefficient of some Group III and Group V Elements in Gold. Electrochemical Soc., Meeting, Cincinnati, Ohio (May 1–5, 1955).
Dorsndorf, H.: Neue Beobachtungen an Versetzungen in Germanium. (New observations on dislocations in Ge). Z. angew. Physik einschl. Nukleonik vol. 9 (1957) pp.531 bis 519.
Durr, W., J. Jaumann and K. Seiler: Solubility and Ionizability of Impurities in Germanium Single Crystals. Z. Naturf. vol. 8 a (1953) pp. 39–46.
Dunlap, W. C., Jr.: Diffusion of Impurities in Germanium. Phys. Rev. vol.94 (1954) pp. 1531–1540.
Dunlap, W. C., Jr.: Electrical Properties of Gold-Germanium Alloys. Phys. Rev. vol.91 (1953) p. 1281.
Dunlap, W. C., Jr.: Properties of Zinc-, Copper-and Platinum-Doped Germanium. Phys. Rev. vol. 96 (1954) pp. 40–45.
Early, J. M.: Design Theory of Junction Transistors. Bell System Techn, J., vol. 32 (1953) pp. 1271–1312.
Emeis, R.: Tiegelfreies Ziehen von Silizium-Einkristallen. (Drawing of Si-monocrystals without crucibles.) Z. Naturforsch. vol. 9a, No. 67 (1954).
Fahnestock, J. D.: Production Techniques in Transistor Manufacture. Electronics vol. 26 (Oct. 1953) pp. 130–134.
Fan, G.: Evaporation of Copper from Germanium. Phys. Rev. (Aug. 1953) pp. 745 to 755.
Fan, H. Y., W. Kaiser, E. E. Klontz, K. Lark-Horovitz and R. R. Pepper: Energy Levels of Photoconductivity in Electron-Bombarded Germanium. Phys. Rev. vol. 95 (1954) pp. 1087–1088.
Fuller, C. S.: Diffusion of Donor and Acceptor Elements into Germanium. Phys. Rev. (April 1952) pp. 136-137.
Fuller, C. S., and J. A. Ditzenberger: Diffusion of Lithium into Germanium and Silicon. Phys. Rev. vol.91 (1953) p. 193.
Fuller, C. S., and J. D. Struthers: Copper as an Acceptor Element in Germanium. Phys. Rev. (1952) p. 526.
Fuller, C. S., J. D. Struthers, J. A. Ditzenberger and K. B. Wolfstirn: Diffusion and Solubility of Copper in Germanium. Phys. Rev. vol. 93 (1954) pp. 1182–1189.
Fuller, C. S., H. C. Theuerer and W. van Roosbroeck: Temperature Effect on Acceptor Centers. Phys. Rev. vol.85 (1952) p. 678.
Geballe, T. H., and F. J Morin: Ionization Energies of Groups III and V. Elements in Germanium. Phys. Rev. vol. 95 (1954) pp 1085–1086.
Goldberg, C.: Acceptors Produced in Germanium by Quenching from High Temperatures. Phys. Rev. (Nov. 1952) pp. 920-924.
Goldstein, B.: The Dissolution of Germanium by Molten Indium. RCA Rev. vol. XVIII, No. 2 (June 1957) p. 213.
Green, M., and J. A. Kafalas: The Purification of Germanium, the Germanium-Tetrachloride-Arsenic Trichloride System. Electrochemical Society Meeting, Cincinnati, Ohio (May 1–5, 1955). Also J. Chem. Soc. (1955) pp. 1604-1607.
Hall, R. N.: Segregation of Impurities During the Growth of Germanium and Silicon Crystals. J. Phys. Chem., vol. 57 (Nov. 1953), pp. 836–839.
Hall, R. N.: P-N Junctions Produced by Rate Growth Variation. Phys. Rev. vol.88 (1952) p. 139.
Hall, R. N., and W. C. Dunlap, Jr.: P-N Junctions Prepared by Impurity Diffusion. Phys. Rev. vol. 80 (1950) pp. 467–468.
Herold, E. W.: New Advances in the Junction Transistor. Brit. J. Appl. Phys. vol. 5 (1954) pp. 115–126.
Holden, A. N.: Preparation of Metal Single Crystals (Abstract). Trans. Am. Soc. Metals vol.42 (1950) p. 319.
Keck, P. H., and M. G. E. Golay: Crystallization of Silicon from a Floating Liquid Zone. Phys. Rev. 89 (1953) p. 1297.
Lark-Horowitz, K.: Impurities. Electr. Engng., N. Y. vol.68 (1949) p. 1047.
Lataiv, H., Jr., L. M. Slifkin and W. M. Portnoy: Self-Diffusion in Germanium. Phys. Rev. (Feb. 1954) pp. 892-893.
Lee, C.A.: A High-Frequency Diffused-Base Germanium Transistor. Bell System Tech. J. vol.35 (1956) p. 23.
Lehmann, G., and C. Meuleau: Temperature Regulator for Germanium Metallurgy. Onde electr. vol. 33 (1953) pp. 678–683.
Logan, R. A.: Thermally Induced Acceptors in Single Crystal Germanium. Phys. Rev. (Aug. 1953) pp. 757-758.
Lehovec, K., and E. Belmont: Preparation of P-N Junctions by Surface Melting. J. Appl. Phys. vol. 24 (Dec. 1953) pp. 1482–1484.
Mayburg, S.: Lattice Defects in Germanium and Silicon. Sylvania Technologist vol. 7 (1954) pp. 109–112.
Moore, A. R.: The Preparation of Single and Multiple P-N Junctions in Single Crystals of Germanium. Transistors I. RCA Lab. Princeton, N. J. (1956).
Moore, A. R., and J. I. Pankove: The Effect of Junction Shape and Surface Recombination on Transistor Current Gain. Proc. I. R. E. vol. 42 (1954) pp. 907–913.
Morin, F. J., and J. P. Maita: Comparison of Copper-Doped Germanium with Heattreated Germanium. Phys. Rev. vol.90 (1953) p. 337.
Moss, T. S., L. Pincherle and A. M. Woodward: Photoelectromagnetic and Photodiffusion Effects in Germanium. Proc. Phys. Soc., Lond. vol. 66B (1953) pp. 743–752.
Müller, C. W.: Alloying Properties of Germanium Free of Edge Dislocation. RCA Rev. vol. XVIII, No. 2 (June 1957) p. 205.
Olsen, K.M.: Single Crystals of Germanium. U.S. Pat. 2679080 (May 1954).
Ozarow, V.: Some Electrical Properties of Germanium Crystals Containing Compen sated Impurities. Phys. Rev. (Feb. 1954) pp. 371-372.
Pankove, J. I.: Recrystallization of Germanium from Indium Solution. R. C. A. Rev. (Mar. 1954) p. 75.
PB 111120: Germanium Crystal Rectifiers (Febr. 1953).
Pearson, G. L., J. D. Struthers and H. C. Theuerer: Impurities. Phys. Rev. vol.77 (1950) p. 809.
Pfann, W. G.: Techniques of Zone Melting and Crystal Growing. Seitz, Solid State Physics 4 (1957) p. 423.
Pfann, W. G.: Temperature-Gradient Zone Melting. AIME Trans., vol.203 (1955) pp. 961–965.
Pfann, W. G., and K.M. Olsen: Purification and Prevention of Segregation in Single Crystals of Germanium. Letter, Phys. Rev. vol. 89., No. 1 (Jan. 1, 1953) pp. 322–323.
Pfann, W. G.: Separation of Two Solutes with Particular Reference to Semiconductors. J. Met. vol. 194 (1952) pp. 861–865.
Pfann, W. G.: Redistribution of Solutes by Formation and Solidification of a Molten Zone. J. Metals vol.6 (1954) p. 294.
Pohl, R. G.: Cross Section of Pulled Crystals. Amer. J. Appl. Phys. (May 1954) pp. 668-669.
R. C. A. Lab Series No. LB 860: The Preparation of Single and Multiple P-N Junctions of Single Crystals of Germanium.
R. C. A. Lab Series No. LB 890: Purification of Germanium by Gradient Freezing.
R. C. A. Lab Series No. LB 891: Laboratory Equipment for Germanium Purification.
R. C. A. Lab Series No. LB 892: Preparation of Single Crystals of Germanium and Silicon.
R. C. A. Lab Series No. LB 922: Continuous Apparatus for Growing Single Crystal Germanium.
R. C. A. Lab Series No. LB 926: Recrystallization of Germanium from Indium Solution
R. C. A. Lab Series No. LB 947: A Study of the Etching Rate of Germanium.
Reck, P. H., and W. van Horn: The Surface Tension of Liquid Silicon and Germanium. Phys. Rev. (Aug. 1953) pp. 512-513.
Reiss, H.: Ionization of Hydrogen in Germanium and Silicon. Am. Phys. Soc., Meeting, Univ. of Southern Calif. (Dez. 28-30, 1955).
Roth, L., and W. E. Taylor: Preparation of Germanium Single Crystals. Proc. IRE (Nov. 1952) pp. 1338-1341.
Rost, R.: Kristalloden-Technik (1956).
Saby, J. S., and W. C. Dunlap, Jr.: Impurity Diffusion and Space-Charge Layers in ‘Fused-Impurity’ P-N Junctions. Phys. Rev. vol. 90, No. 4 (May 15, 1953) pp. 630 to 632.
Seiler, K., K. Keller and K. Blank: The Question of Thermally Produced Lattice Defects in Germanium. Naturwiss. (Jan. 1953) p. 56.
Slichter, W. P., and E. D. Kolb: Solute Redistribution in Germanium crystals. Phys. Rev. (June 1953) pp. 978-988.
Stripp, K. F., and A.R. Moore: The Effects of Junction Shape and Surface Recombination on Transistor Current Gain. Part. 2. Proc. IRE. vol. 43 (1955) pp. 856 to 866.
Teal, G. K., M. Sparks, and E. Buehler: Growth of Germanium Single Crystal Containing P-N Junctions. Phys. Rev. vol.81 (1951) p. 637.
Teal, G. K.: Reprint of a paper entitled: Some Recent Development in Silicon and Germanium Materials and Devices. Presented at National Conference on Airborne Electronics (May 10, 1954).
Teal, G. K., M. Sparks and E. Buehler: Single Crystal Germanium. Proc. IRE (Aug. 1952) p. 906.
Tyler, W. W., R. Newman and H. H. Woodbuyr: Properties of Germanium Doped with Nickel. Phys. Rev. vol. 98 (1955) pp. 461–468.
Tyler, W. W., H. H. Woodbury and R. Newman: Some Properties of Germanium Doped with Iron or Cobalt. Phys. Rev. vol.94 (1954) p. 1419.
Tyler, W. W., R. Newman and H. H. Woodbury: Properties of Germanium Doped with Cobalt. Phys. Rev. vol. 97 (1955) pp. 669–672.
Tyler, W. W., and H. H. Woodbury: Properties of Germanium Doped with Iron. I. Electrical Conductivity. Phys. Rev. vol. 96 (1954) pp. 874–882.
van der Maesen, F., and J. A. Brenkman: The Solid Solubility and the Diffusion of Nickel in Germanium. Phil. Res. Rep. vol. 9 (1954) pp. 225–230.
Verma, A. R.: Crystal Growth and Dislocation. London, Butterworth, Scientific Publications (1953).
Visvanathan, S., and J. F. Battery: Some Problems in the Diffusion of Minority Carriers in a Semiconductor. J. Appl. Phys. (Jan. 1954) pp. 99-102.
Woodbury, H. H., and W. W. Tyler: Some Properties of Germanium Doped with Manganese. Bull. Amer. Phys. Soc. vol. 30 (1955) pp. 11–12, No. 2.
Contacts, etching, diode and transistor design
Adam, G.: Der Einfluß der Gasatmosphäre auf die Oberflächenkombination bei Germanium (The influence of gas atmosphere on surface recombination on germanium). Z. Naturf. vol 12a (1957) p. 574.
Armstrong, L. D.: P-N Junctions by Impurity Introduction Through an Intermediate Metal Layer. Proc. IRE. vol. 40 (1952) pp. 1341–1342.
Arrons, M. W., M. Pobereskin, J. E. Gates, and E. B. Dale: Distribution of the Mass Transported from a Collector into a Germanium Crystal by the Forming Process. Phys. Rev. vol.95 (1954) p. 1345.
Bardeen, J.: Surface States and Rectification at a Metal-Semiconductor Contact. Phys. Rev. vol. 71 (May 1947) pp. 717–727.
Batterman, B. W.: Hillocks, Pits, and Etch Rate in Germanium Crystals. J. Appl. Phys. vol.28 (1957) p. 1236.
Bocciarelle, C. G.: Properties of Metal to Germanium Contacts. Physica vol.20 (1954) pp. 1020–1025.
Borneman, E. H., R.F. Schwarz and J. J. Stickler: Rectification Properties of Metal-Semiconductor Contacts. J. Appl. Phys. vol. 26 (1955) pp. 1021–1029.
Bradley, W. E.: Principle of the Surface-Barrier Transistor. Proc. IRE. vol.41 (1953) p. 1702.
Brattain, W. H., and J. Bardeen: Surface Properties of Germanium. Bell Syst. Techn. J. (Jan. 1953) pp. 1-41.
Brattain, W. H., and C. G. B. Garrett: Surface Properties of Semiconductors. Physica vol. 20 (1954) pp. 885–892.
Brouillet, P., F. Epeldoin and W. A. Wooster: Electrolytic Polishing of Germanium and Platinum in the Presence of F-or Cl-ions. C. R. Acad. Sci., Paris (Oct. 1953) pp. 895-897.
Buck, T. M., and F. S. McKim: Depth of Surface Damage Due to Abrasion on Germanium. J. Electrochemical Soc. vol.103 (1956) p. 593.
Camp, P. R.: A Study of the Etching Rate of Single-Crystal Germanium. J. Electrochem. Soc. vol. 102 (1955) pp. 586–593.
Chans, Roger: Etching Behavior of Pile-Irradiated Germanium and Silicon Single Crystals. J. Appl. Phys. vol.28 (1957) p. 385.
Clarke, E. N.: Oxygen-Induced Surface Conductivity on Germanium. Phys. Rev. (Aug. 1953) pp. 756-757.
Dawson, J. W.: Germanium Diodes Sealed in Glass. Sylvania Tech., vol. 6 (Jan. 1953) pp. 1–4.
Dillon, J. A. Jr., and H. E. Farnsworth: Work-Function Studies of Germanium Crystals Cleaned by Ion Bombardment. J. Appl. Phys. vol.28 (1957) p. 174.
Dunlap, W. C., Jr.: Germanium Diode from Special Pellets. J. Appl. Phys. vol. 25 (1954) pp. 448–451.
Ellis, R. C., Jr., and S. P. Wolsky: New Etches for Germanium. J. Appl. Phys. vol. 24 (Nov. 1953) pp. 1411–1412.
Ellis, W. G.: Surface Studies on Single-Crystal Germanium. J. Appl. Phys. (1957) p. 1262.
Eriksen, W. T., H. Statz, and G. G. De Mars: Excess Surface Currents on Germanium and Silicon Diodes. J. Appl. Phys. vol.28 (1957) p. 133.
Geist, D., and E. Preuss. Ätzen und Polieren von Germaniumoberflächen. Mit 19 Textabbildungen. (Etching and polishing of germanium surfaces.) Z. Angew. Phys. vol. 9, No.10 (1957) p. 526.
Hall, R. N.: Power Rectifiers and Transistors. Proc. IRE. vol. 40 (Nov. 1952) p. 1512.
Harten, H. U.: Blocking Contacts Between Germanium and Evaporated Metal Films. Naturwissensch. vol.41 (1954) p. 162.
Henisch, H. K., and F. D. Morten: Forward Characteristic of Injecting Area Contact on Germanium. Proc. Phys. Soc. (Section B) vol. 66, Part 10/(4068) (Oct. 1953) pp. 841–844.
John, H. F., and R. L. Longini: Effects of Electrolytic Etching on the Electrical Properties of Germanium. Electrochem. Soc. Meeting, Pittsburgh, Penn. (Oct. 13, 1955).
Kestenbaum, A. L., and N. H. Ditrick: Design, Construction and High-Frequency Performance of Drift Transistors. RCA Rev. vol.18 (1957) p. 12.
Kingston, R. H.: Water-Vapor-Induced N-Type Surface Conductivity on P-Type Germanium. Phys. Rev. vol. 98 (1955) pp. 1766–1775.
Lin, L. A.: Study of Injecting and Extracting Contacts on Germanium Single Crystals. Rev. of Sci. Instr. vol.28 (1957) p. 187.
Longini, R. L.: Electric Forming of n-Germanium Transistors Using Donor-Alloy Contacts. Phys. Rev. (Dec. 1951) p. 1254.
McKelvey, J. P., and R. L. Longini: Volume and Surface Recombination Rates for Injected Carriers in Germanium. J. Appl. Phys. vol. 25 (1954) pp. 634–641.
Mitchell, W. M.: Some Techniques for Making Stable Nonrectifying Contacts to Germanium and Other Semiconductors. J. Sci. Instr. vol. 31 (1954) pp. 147–148.
Muss, D.H.: Capacitance Measurements on Alloyed Indium-Germanium Junction Diodes. J. Appl. Phys. No.26 (1955) p. 1514.
Nimi, R.: On the Changes in Contact Potential Difference of a Germanium Rectifier During the Electrical Forming. J. Phys. Soc., Japan, vol. 8 (May–June 1953) pp. 324 to 330.
Oberly, J. J.: Etch Pits and Dislocations in Germanium and Silicon. J. Metals vol. 6 (1954) pp. 1025–1026.
Pankove, J. I.: Transistor Fabrication by the Melt-Quench Process. Proc. IRE. vol. 44 (Febr. 1956) p. 185. (Two closely-spaced p-n junctions produced in small cylindrical doped germanium crystal by partial melting followed by rapid freezing.)
Pankove, J. I.: Methods for Revealing P-N Junctions and Inhomogeneities in Germanium Crystals. RCA-Review vol. 26 (Sept. 1955) p. 398 (Emersion etch, color contrast technique).
Peters, C., and H. Strong: The Manufacturing and Testing of Germanium Rectifiers. G. E. C. Telecommun. (1953) pp. 34-39.
Pietenpol, W. J.: P-N Junction Rectifier and Photo-Cell. Phys. Rev. vol. 82 (April 1951) p. 120.
Pudvin, J. F.: Plating Techniques in the Fabrication of Semiconductors. Electrochem. Soc. Meeting, Pittsburgh, Penn. (Oct. 13, 1955).
Roka, E. G., C.H. Jackson, and R.P. Ulrich: Evaporated Point Contact Rectifiers. Letter, J. Appl. Phys. vol. 24, No. 2 (Febr. 1953) pp. 228–229.
Ronalt, C. L., and G. N. Hall: A High-Voltage, Medium Power Rectifier. Proc. IRE. vol. 40 (Nov. 1952) p. 1519.
Rösner, O.: Etching Agents for Germanium. I. Chemical Materials. Z. Metallkunde vol. 46, (1955) pp. 225–229.
Schell, H. A.: Ätzversuche an Germanium-Einkristallen. (Etching experiments with Ge-monocrystals.) Z. Metallkde. vol.47 (1956) p. 614.
Shulman, R. G., and D. M. van Winkle: Pressure-Welded P-N Junctions in Germanium. Letter, J. Appl. Phys. vol. 24, No. 2 (Febr. 1953) p. 224.
Sim, A.C.: A Quantitative Theory of the Electro-Formation of Metal-Germanium Point Contacts, J. Contacts and Electronics vol.3 (1957) p. 139.
Stelinak, J. P.: Electric Forming in n-Germanium Transistors Using Phosphorous Alloy Contact. Phys. Rev. (July 1951) p. 165.
Thedieck, R.: On the Forming of Germanium Surfaces. Z. Angew. Phys. vol. 5 No. 5 (1953) pp. 163–165.
Thedieck, R.: The Mechanism of Point Contact Rectifiers. Z. Angew. Phys. vol. 5 No. 5 (May 1953) pp. 165–166.
Tiley, J. W., and R.A. William: Electrochemical Techniques for Fabrication of Surface Barrier Transistors. Proc. IRE. vol.41 (1953) p. 1706.
Trousil, Z.: Formation of Electrons and Electron Holes by Chemical Reaction on the Surface of Germanium. Czechoslov. J. Phys. vol.4 (1954) p. 239.
Tyler, W.W., and W. C. Dash: Dislocation Arrays in Germanium. J. Appl. Phys. vol. 28 (1957) 9. 1221.
Waltz, M. C.: Electrical Contacts for Transistors and Diodes. Bell Lab. Record vol. 33 (1955) pp. 260–263.
Wallmark, U. T.: Influence of Surface Oxidation on Alpha of Germanium PNP Transistors. RCA Rev. vol. XVIII, No. 2 (June 1957) p. 255.
Wurst, E. C. Jr., and E. H. Bornemann: Rectification Properties of Metal-Silicon Contacts. J. Appl. Phys. vol.28 (1957) p. 235.
Zielasek, G.: Etching Agents for Germanium. II. Physical Observations. Z. Metallkunde vol. 46 (1955) pp. 229–233.
Methods of measurement
Bardeen, J., and S.R. Morrison: Surface Barriers and Surface Conductance. Physica vol. 20 (1954) pp. 873–884.
Billig, E., and J. J. Dowd: P-N Junction Revealed by Electrolytic Etching. Letter, Nature (4368) (July 1953) p. 115.
Brattain, W. H., and C. G. B. Garrett: Analyzing Surface Properties of Germanium by Photoexcitation and Electric Field. Bell System Techn. J. vol. 35 (Sept. 1956) p. 1019.
Buck, T. M., and W. H. Brattain: Investigations of Surface Recombination Velocities on Germanium by the Photoelectromagnetic Method. J. Electrochem. Soc. vol. 102 (1955) pp. 636–640.
Burstein, E., E. E. Bell, J. W. Davisson and M. Lax: Optical Levels in Silicon. J. phys. Chem. vol. 57 (1953) pp. 849–852.
Cummerow, R. L.: Photovoltaic Effect in P-N Junctions. Phys. Rev. vol. 95 (1954) pp. 16–21.
Dunlap, W. C., Jr., and R. L. Watters: Direct Measurement of the Dielectric Constants of Silicon and Germanium. Phys. Rev. (Dec. 1953) pp. 1396-1397.
Ewels, J.: The Measurement of Transistor Characteristics. Electronic Engng. (July 1954) pp. 313-314.
Geballe, T. H., and F. J. Morin: Ionization Energies of Groups III and V Elements in Germanium. Phys. Rev. vol. 95 (1954) pp. 1085–1096.
Goucher, F. S.: Measurement of Hole-Diffusion in N-Type Germanium. Phys. Rev. (Feb. 1951) p. 475.
Gunn, J. B.: Measurement of the Surface Properties of Germanium. Proc. Phys. Soc. Lond. B vol. 67 (1954) pp. 409–421.
Henisch, H. K., and J. Ewels: Apparatus for Electrical Measurements on Semiconductors. Research (May 1952) pp. 235-237.
Johnson, V. A., and F. M. Shipley: Adiabatic Hall Effect in Semiconductors. Phys. Rev. vol. 90, No. 4 (1953) pp. 523–529.
Kelen, A.: A Micromanipulator for Electrical Investigation of Semiconducting Materials. Appl. Sci. Res. B (1953) pp. 125-128.
Lawrance, R., and A. F. Gibson: The Measurement of Drift Mobility in Semiconductors. Proc. Phys. Soc., Lond. (Dec. 1952) pp. 994-995.
Lomer, W. M.: The Direct Conversion of Beta-Irradiation Energy into Low-Voltage Electrical Energy. Atomic Energy Res. Establ. (Harwell) Mem. T/M 108 vol.11 (1954) p. 3.
McAfee, K. B., W. Shockley and M. Sparks: Measurement of Diffusion in Semiconductors by a Capacitance Method. Phys. Rev. (April 1952) pp. 137-138.
MacDonald, A. G., J. Soled and C. A. Stearns: Four-Probe Instrument for Resistivity Measurements of Germanium and Silicon. Letter, Rev. Sci. Ins. vol. 24 (Sept. 1953) pp. 884–885.
Miller, S. L.: Avalanche Breakdown in Germanium. Phys. Rev. vol. 99 (1955) pp. 1234–1241.
Muss, D. R.: Capacitance Measurements on Alloyed Indium-Germanium Junction Diodes. J. Appl. Phys. vol. 26, 1514 (1955).
O’Neill, B. J., and A. Gutterman: Methods of and Equipment for Transistor Testing. Electronics (July 1933) pp. 172-175.
Pfann, W. G,. and W. van Roosbroeck: Radioactive and Photoelectric P-N Junction Power Sources. Phys. Rev. vol.95 (1954) p. 597.
Prince, M. B.: Drift Mobilities in Semiconductors, I. Germanium. Phys. Rev. vol. 92, No. 3 (Nov. 1, 1953) pp. 681–687.
R. C. A. Lab Series No. LB-881: Determination of Orientation and Deformation of Germanium Crystals.
R. C. A. Lab Series No. LB 900: Equipment for Measurement of Junction Transistor Small-Signal Parameters for a Wide Range of Frequencies.
Rose, F. W. G., and E. W. Timmins: A Method of Estimating Impurity Concentrations in Germanium. Proc. Phys. Soc., Lond. (Nov. 1953) pp. 984-986.
Spitzer, W. G., T. E. Firle, M. Cutler, R. G. Shulman and M. Becker: Measurement of the Lifetime of Minority Carriers in Germanium. J. Appl. Phys. vol. 26 (1955) pp. 414–417.
Steele, E. L.: Charge Storage in Junction Diodes. J. Appl. Phys. vol.25 (1954) pp. 916–918.
Stevenson, D. T., and R. J. Keyes: Measurement of Lifetimes and Diffusion Constants in Germanium. Phys. Rev. vol.94 (1954) p. 1416.
Stevenson, D. T., and R. J. Keyes: Measurement of Minority Carrier Lifetimes in Germanium and Silicon. J. Appl. Phys. vol.26 (1955) p. 190.
Valdes, L. B.: Measurement of Minority Carrier Lifetime in Germanium. Proc. IRE. vol.40 (1952) p. 1420.
Valdes, L. B.: Hall Effect Measurements. Proc. IRE., vol.40 (1952) p. 1414.
Valdes, L. B.: Resistivity Measurements. Proc. IRE. vol.40 (1952) p. 420.
Valdes, L. B.: Resistivity Measurements on Germanium for Transistors. Proc. IRE. vol. 42 (1954) pp. 420–427.
References on Silicon
Bradley, W. E.: Silicon Surface Barrier Transistors. IRE., vol.42 (1954) p. 486.
Carman, J. N., P. E. Stello and C. A. Bittmann: Regrowth of Silicon Through Low-Melting-Zone Silicon-Gold Eutectic. J. Appl. Phys. vol.25 (1954) p. 543.
Chapin, D. M., C. S. Fuller and G.L. Pearson: A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power. J. Appl. Phys. vol. 25 (1954) pp. 676–677.
Chapin, D. M., C. G. Fuller and G. L. Pearson: The Bell Solar Battery. Bell Lab. Record vol. 33 (1955) pp. 241–246.
Dunlap, W. C., Jr., H. P. Mahon, Jr., and H. D. Böhm: Diffusion of Impurities in Silicon. Phys. Rev. vol.96 (1954) p. 822.
Emeis, R.: Crucible-Free Drawing of Silicon Single Crystals. Z. Naturf. vol. 9 a (1954) p. 67.
Esaki, L.: Thermal Treatment of Silicon Rectifiers. Phys. Rev. vol. 89, No. 2 (Jan. 15, 1953) pp. 398–399.
Granvtlle, J. W.: A Method of Making Silicon Junction Diodes. Brit. Jour. Appl. Phys. vol.6 (1955) p. 109.
Gudmundsen, R. A., and J. Maserjian, Jr.: Semiconductor Properties of Recrystallized Silicon in Aluminum Alloy Junction Diodes. J. Appl. Phys. vol.28 (1957) p. 1308.
James, J. A., and D.H. Richards: Radiochemical Analysis of Silicon. J. of Electronics and Control vol.3 (1957) p. 500.
Johnson, E. R., and J. A. Amick: Formation of Single-Crystal Silicon-Fibres. J. Appl. Phys. vol.25 (1954) p. 1204.
Hino, J., and H. E. Stauss: Melting of Undoped Silicon Ingots. J. Metals vol. 656 (June 1952) N. R. L. Report 357.
Keck, P. H., W. van Horn, J. Soled and A. MacDonald: Floating Zone Recrystallization of Silicon. Rev. Sci. Instr. vol. 24 (1954) pp. 331–334.
Keck, P. H.: Floating Zone Crystallization of Silicon. Physica vol. 20 (1954) pp. 1059 to 1065.
Keck, P. H., and M. J. E. Golay: Crystallization of Silicon from a Floating Liquid Zone. Phys. Rev. vol. 29, No. 6 (March 15, 1953) p. 1297.
Kleinknecht, H.: Silicon Single-Crystal Rods. Naturwiss. vol.39, No. 17 (1952) pp. 400–401.
Litten, F. B., and H. C. Anderson: High-Purity Silicon. J. Electrochem. Soc. vol.101 (1954) pp. 287–292.
McAfee, K. B., and G. L. Pearson: The Electrical Properties of Silicon P-N Junctions Grown from the Melt. Phys. Rev. vol. 87 (July 1952) p. 190.
Miller, R. C., and A. Savage: Diffusion of Aluminum in Single Crystal Silicon. J. Appl. Phys. vol.27 (1956) p. 1430.
Morin, F. J., and J. P. Maita: Electrical Properties of Silicon Containing Arsenic and Boron. Phys. Rev. vol. 96 (1954) pp. 28–35.
Müller, S.: Inversionsrandschichten auf p-Silizium. (Inversion edge layers on p-Silicon.) Z. Naturforsch. vol. 12a (1957) p. 112.
Ono, K., and T. Matsushima: The Production of Pure Silicon. Science Repts. Research Inst., Tohoku Univ. Ser. A, vol. 6 (1954) pp. 477–496.
Pearson, G. L., and J. Bardeen: Photoeffects in P-N Junctions. Phys. Rev. vol.75 (1949) p. 865.
Pearson, G. L., and C. S. Fuller: Silicon P-N Junction Power Rectifiers and Lightning Protectors. Proc. IRE vol.42 (1954) p. 760.
Pharo, W. B., and W. R.Cherry: Silicon Pulling Furnace. Electrochem. Soc. Meeting,. Cincinnati, Ohio (May 1–5) 1955.
R. C. A. Lab Series No. LB 892: Preparation of Single Crystals of Germanium and Silicon.
Reck, P. H., and W. van Horn: The Surface Tension of Liquid Silicon and Germanium. Phys. Rev. (Aug. 1953) pp. 512-513.
Roth, L., and W.E. Taylor: Preparation of Germanium Single Crystals. Proc. IRE vol. 40 (1952) pp. 1338–1341.
Taft, E. A., and F. H. Horn: Gold as a Donor on Silicon. Phys. Rev. vol.95 (1954) p. 64.
Teal, G. K., and E. Buehler: Growth of Silicon Single Crystals and of Single Crystal Silicon P-N Junctions. Bull. Amer. Phys. Soc. vol.27 (1952) p. 14, No. 3.
Theuerer, H. C.: Removal of Boron from Silicon by Hydrogen Water Vapor Treatment. J. Metals vol. 8 (7-12) Oct. 1956 p. 1316.
Thornton, C.G., and L. D. Harnley: A New High-Temperature Silicon Diode. Proc. IRE vol. 43 (1955) pp. 186–188.
Silicon Rectifier Handbook. Bloomington: Sarkes Tarzan 1956.
Contacts, etching, diode and transistor design
Andres, B. J., and E. L. Steele: A Medium Power Silicon Rectifier. Wescon Conference, Aug. 1957.
Billig, E., and D. B. Gasson: Preparation of Large-Area p-n Junctions in Silicon by Surface Melting. J. Appl. Phys. vol.28 (1957) p. 1242.
Gudmundsen, R. A., and J. Maserjian, Jr.: Semiconductor Properties of Recrystallized Silicon in Aluminum Alloy Junction Diodes. J. Appl. Phys. vol.28 (1957) p. 1308.
Jacobs, H., F. A. Brand, W. Matthei, and A. P. Ramsa: Forming Point-Contact Silicon Transistors. J. Appl. Phys. vol. 25 (1954) pp. 1406–1412.
Jacobs, H., F.A. Brand, and W. Matthei: Forming Silicon Point-Contact Transistors. Letter, J. Appl. Phys. vol. 24 No. 10 (Oct. 1953) p. 1340.
Pearson, G. L., and B. Sawyer: Silicon P-N Junction Alloy Diodes. Proc. IRE vol. 40 (Nov. 1952) p. 1348.
Pearson, G. L., and P. W. Foy: Silicon P-N Junction Diodes Prepared by the Alloying Process. Phys. Rev. vol. 87 (July 1952) p. 190.
Scaff, J. H., and R. S. Ohl: Development of Silicon Crystal Rectifiers for Microwave Radar Receivers. Bell Syst. Tech. J. vol. 26 (Jan. 1947) p. 1.
Sullivan, M. V., and J. H. Eigler: A New Method for Making Ohmic Contacts to Silicon at Low Temperatures. Electrochem. Soc. Meeting, Pittsburgh, Penn. (Oct. 13, 1955).
Sullivan, M. V., and J. H. Eigler: Five Metal Hydrides as Alloying Agents on Silicon. Bell Telephone-Laboratories. J. Electrochem. Soc. vol. 103, No. 6 (April 1956).
Wannlund, A. J., and W. P. Waters: Silicon p-n-p Fused-Junction Transistor. Wescon Conference, Aug. 1957.
Wolff, E. A., Jr.: 50 Watt Silicon Diffused Power Transistor. Wescon Conference, Aug. 1957.
Wurst, E. C., Jr., and E. H. Bornemann: Rectification Properties of Metal-Silicon Contacts. J. Appl. Phys. vol. 28 (1957).
Methods of measurements
Debye, P. P., and T. Kohane: Hall Mobility of Electrons and Holes in Silicon. Phys. Rev. vol. 94 (1954) pp. 724–725.
Hannay, N. B., J. R. Haynes and R. G. Suhlman: The Interaction of Traps and Heat Treatments in silicon. Phys. Rev. vol.96 (1954) p. 833.
Herlet, A.: Bestimmung der Diffusionslänge L und der Inversionsdichte n i aus den Durchlaßkennlinien von legierten Silizium-Flächengleichrichtern (Determination of diffusion length and inversion density from the forward characteristic of alloyed Sijunction diodes). Z. angew. Phys. vol.9 (1957) p. 155.
Heywang, W., M. Zerbst and F. Bischoff: On the Conductivity of Silicon. Naturwiss. vol. 41 (1954) pp. 301–302.
McSkimin, H. J., W. L. Bond, E. Buehler and G. K. Teal: Measurements of the Elastic Constants of Silicon Single Crystals and their Thermal Coefficients. Phys. Rev. (Sept. 1951) p. 1080.
Watters, R. L., and G. W. Ludwig: Measurement of Carrier Lifetime in Silicon. J. Appl. Phys. vol.27 (1956) p. 489.
References on Electrographite
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Bakker, J.: Electrolytically Polished Graphite Anode. U.S. Pat. 2494425 (Jan. 10, 1950).
Barnes, B. T., W. E. Forsythe and E. Q. Adams: The Total Thermal Emissivity of Various Materials at 100–500° C. J. Opt. Soc. Amer. vol. 37 (1947) pp. 804–807.
Barnes, B. T.: Total Radiation from Polished and Soot-Covered Nickel. Phys. Rev. vol. 34 (1929) pp. 1026–1030.
Barnes, B. T., E.Q. Adams and E. W. Forsythe (General Electric Company): Total Emissivity of Various Materials. J. Opt. Soc. Amer. vol.30 (1940) p. 269 A. (Carbon, fused quartz Corex D and Nonex-glass from 100-500° C.)
Briggs, T. H.: Carbonized Nickel for Radio Tubes. Metals & Alloys vol. 9 (Nov. 1938) pp. 303–306.
Buerschaper, R. A.: Thermal and Electrical Conductivity of Graphite and Carbon at Low Temperatures. J. Appl. Phys. vol. 15 (1944) pp. 452–454.
Clark, G. L., A. C. Eckert, Jr., and R. L. Burton: Commercial Experimental Carbon Blacks. Industr. Engng. Chem. vol. 41 (1949) pp. 201–208.
Collier, L. J., W. S. Stiles and G. A. Taylor: The Variation with Temperature of the Electrical Resistance of Carbon and Graphite between 0 and 900° C. Proc. Phys. Soc., Lond. vol. 51 (1939) pp. 147–152.
Cox, J. H.: Improvements in Mercury Arc Rectifiers. Sonderbuch, 1933. (Vortrag im AIEE Juni 1933.)
Dällenbach, W.: Electrotechn. Z. vol.55 (1934) p. 89. (Gaskets for Hg-Fe tank rectifiers; microanalysis of gas from tank.)
Dällenbach, W., E. Gerecke and E. Stoll: Phys. Z. vol.26 (1925) p. 10. (Back-ignition in gas discharges.)
Dushman, S.: Scientific Foundations of Vacuum Technique, 496 pages. New York: John Wiley and Sons 1949.
Eltzin, J. A., and A. P. Jewlew: Degassing of Graphite at High Temperatures. Phys. J., USSR vol.5 (1934) p. 687. (In German.)
Gottschalk, A., and W. Kluge: AEG-Mitt. (1934) p. 67. (High-tension oxide-cathode rectifier with Hg-vapor filling.)
Güntherschulze, A.: Handbuch der Physik vol. 17. Berlin 1926. Elektrische Gleichrichter und Ventile, 2. Aufl. Berlin 1929.
Hidnert, P.: Thermal Expansion of Graphite. Bur. Stand. J. Res. vol.13 (1931) p. 37.
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Ivey, H. F.: Thermionic Electron Emission from Carbon. Phys. Rev. vol.76 (1950) p. 567.
Jacobi, W., and O. Karl: DRGM. 1243 631/32. (Support of graphite anodes in Cu caps.)
O.Karl: DRP 506 622/29/30. (Mica springs for electrode supports.)
Kirk, R. E., and D. F. Othmer: Encyclopedia of Chemical Technology vol. 3, pp. 1 to 34. New York: Interscience Encyclopedia, Inc., 1949. Abott, H. W.: Carbon.
Kluge, W.: Glühkathoden-Stromrichtergefäße. AEG-Mitt. (1939) p. 117–124, No. 2.
Kluge, W.: Hochspannungsglühkathodenröhren mit Quecksilberdampffüllung ohne und mit Gittersteuerung. Elektrotechn. Z. vol.57 (1936) p. 333, No. 12.
Kluge, W.: Glocken-Anode. VDE-Fachbericht vol.8 (1936) p. 105.
Kluge, W.: Graphite Anodes in Rectifiers. Elektrotechn. Z. vol.57 (1936) p. 303, No. 11.
Kohl, W. H.: A New Method for the Application of Luminescent Screens to Glass Surfaces. Can. J. Res. A (1935) pp. 126-132 — J. El. Chem. Soc. vol. 96 (1949) pp. 3, 123-131.
Kohl, W. H.: Materials Technology for Electron Tubes. New York 1951.
Kopelman, B.: Clean-up of Graphite Lubricant from Tungsten Wire. Sylvania Technologist vol. 2 (1949) pp. 13–16.
Kruh, O.: DRP 346111/17/21. (Fastening of electrode supports by Cu caps.)
Lange, N. A.: Handbook of Chemistry. Ohio: Handbook Publishers 1946.
Lipson, A., and A. R. Stokes: The Structure of Graphite. Proc. Roy. Soc., Lond. A vol. 181 (1942) pp. 101–105.
Malmstrom, C., R. Keen and L. Green, Jr.: Some Mechanical Properties of Graphite at Elevated Temperatures. J. appl. Phys. vol. 22 (1951) pp. 593–600.
Mantell, C. L.: Industrial Carbon, 2nd Ed. New York: Van Nostrand 1946.
Mellor, J. W.: Inorg. and Theor. Chemistry, vol. V and VI, pp. 710–977 and 1-134: Carbon.
Meyer, L.: The Surface Reaction of Graphite with Oxygen, Carbon Dioxide, and Water Vapour at Low Pressures. Trans. Faraday Soc., Lond. vol. 34 (1938) pp. 1056 to 1061, No. 208.
Moss, H.: Cathode-Ray Tube Progress in the Past Decade with Special Reference to Manufacture and Design. Advances in Electronics, vol. 2. New York: Academic Press 1950.
Müller-Lübeck, K. E.: Der Quecksilbergleichrichter, vol. I and II. Berlin 1925 and 1929.
Murphy, J. R.: Colloidal Graphite Treatment of Mold Surface. Glass Ind. vol.31 (1950) pp. 250–253.
Naesaenen, R.: Oxydation of Graphite in Glow Discharge. Suomen Kemstilethi (B) vol.10 (1937) p. 24.
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Paterson, Sir Clifford, and R. E. Leads: Diamond Dies for Wire Drawing. Research vol. 1 (1947) pp. 2–10.
Pauling, L., and W. S. Sheehan: Association Energies of Carbon Monoxide and Heat of Sublimation of Graphite. Proc. Nat. Acad. Sci., Wash. vol. 36 (1949) pp. 359–363.
Porter, B. H.: Impregnation Studies with Colloidal Graphite. J. Appl. Phys. vol. 8 (1937) pp. 479–482.
Porter, B. H.: Research Applications of Colloidal Graphite. Rev. Sci. Instr. vol. 7 (1936) pp. 101–106, No. 2. (Vacuum technique, vacuum tubes, ionization chambers, el. contacts.)
Powell, R. W.: Thermal and Electrical Conductivity of Acheson Graphite from O to 800° C. Phys. Soc. Proc. vol. 49 (1937) pp. 419–426.
Powell, R. W., and T. H. Schofield: Thermal Conductivity of Acheson Graphite. Proc. Phys. Soc., Lond. vol.51 (1939) p. 153.
Prescott, L. H., and W. B. Hincke: The True Temperature Scale of Carbon. Phys. Rev. vol. 31 (1928) pp. 130–134. (λ =.66μ 1250-2700° K.)
Reimann, A. L.: Thermionic Emission from Carbon. Proc. phys. Soc., Lond. vol. 50 (1938) pp. 496–500. (Filament between 1665 and 2191° K: A = 30 amp/cm2 degree2; ψ = 4.34 eV.)
Ryschkewitsch, E.: Physical Chemistry of Manufacturing and Application of Graphite. Z. Elektrochem. vol.42 (1936) p. 687, Nc. 9.
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Spitzer, E. E.: Application of Graphite as an Anode Material in High Vacuum Transmitting Tubes. Proc. IRE vol.21 (1933) p. 1075.
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Knoll, M. (1959). Semiconductors and Organic Materials. In: Materials and Processes of Electron Devices. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-45936-8_8
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