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Modeling and Electrical Simulations of Thin-Film Gated SOI Lateral PIN Photodetectors for High Sensitivity and Speed Performances

  • Guoli Li
  • Yun Zeng
  • Wei Hu
  • Yu Xia
  • Wei Peng
Part of the Communications in Computer and Information Science book series (CCIS, volume 396)

Abstract

Thin-film gated SOI lateral PIN (LPIN) photodetectors was proposed, with ITO deposited on topside as transparent gate electrode. This paper investigates performances of the photodetectors versus the P-doping level in the intrinsic region (I-region), with gate voltage applied. We present analytical model and two-dimensional Atlas simulations of the current characteristics, sensitivity and speed performance. At a 400 nm wavelength, the output photocurrent approximately reaches the available photocurrent, the internal quantum efficiencies yield over 90%, even nearly 100% with various dopings. In terms of speed performances, the total -3dB frequencies of the photodetectors are up to a few tens of MHz with the intrinsic length of 8 um. And dark currents as low as 10− 14 A can give a high ratio of more than 107 between illuminated to dark currents under low-voltage operation. With such advantageous electrical characteristics, thin-film gated SOI LPIN photodetectros appear highly suitable for optical storage systems and blue DVD applications.

Keywords

lateral PIN photodetector SOI intrinsic region fully depleted P-doping 

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References

  1. 1.
    Mueller, T., Xia, F.N., Avouris, P.: Graphene photodetecors for high-speed optical communications. Nature Photon. 4, 297–301 (2010)CrossRefGoogle Scholar
  2. 2.
    Nemecek, A., Zach, G., Swodboda, R., Oberhauser, K., Zimmermann, H.: Integrated BiCMOS p-i-n photodetectors with high bandwidth and high responsivity. IEEE J. Select. Top. Quantum Electron. 12(6), 1469–1475 (2006)CrossRefGoogle Scholar
  3. 3.
    Afzalian, A., Flander, D.: Physical modeling and design of thin-film SOI lateral PIN photodetectors. IEEE Trans. Electron Dev. 52(6), 1116–1122 (2005)CrossRefGoogle Scholar
  4. 4.
    Afzalian, A., Flander, D.: Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodetectors. Solie-State Electron. 51(2), 337–342 (2007)CrossRefGoogle Scholar
  5. 5.
    Bulteel, O., Flander, D.: Optimization of blue/UV sensors using p-i-n photodiodes in thin-film SOI technology. In: 215th Electrochemical Society (ECS) Meeting, San Francisco (2009)Google Scholar
  6. 6.
    Navo, C., Giacomini, R., Afzalian, A., Flander, D.: Operation of lateral SOI photodiodes with back-gated bias and intrinsic length variation. In: 223th Electrochemical Society (ECS) Meeting. Toronto (2013)Google Scholar
  7. 7.
    Xie, H.Q., Zeng, Y., Zeng, J.P., Wang, T.H.: Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film. J. Cent. South Univ. Technol. 18, 744–748 (2011)CrossRefGoogle Scholar
  8. 8.
    Rudenko, T., Rudenko, A., Kilchytska, V., Critaloveatu, S., Ernst, T., Colinge, J.P., Dessard, V., Flander, D.: Determination of film and surface recombination in thin-film SOI devices using gated-diode technique. Solie-State Electron. 48, 389–399 (2004)CrossRefGoogle Scholar
  9. 9.
    Sze, S.M., Ng, K.K.: Physics of semiconductor devices. Wiley Interscience Press, New Jersey (2007)Google Scholar
  10. 10.
    ATLAS User’s Manual Device Simulation Software. Silvaco Inc., Santa Clara (2010)Google Scholar
  11. 11.
    Kinshino, K., Unlu, M.S., Chyi, J.I., Reed, J., Arsenault, L., Morkoc, H.: Resonant cavity-enhanced (RCE) photodetectors. IEEE J. Quantum Electron. 27(8), 2025–2034 (1991)CrossRefGoogle Scholar
  12. 12.
    Afzalian, A., Flander, D.: Speed performances of thin-film lateral SOI PIN photodiodes up to tens of GHz. In: 2006 IEEE International SOI Conference Proceedings, New York, pp. 99–100 (2006)Google Scholar
  13. 13.
    Zimmermann, H.: Integrated Silicon Opto-electronics. Springer Press, Berlin (2010)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Guoli Li
    • 1
  • Yun Zeng
    • 1
  • Wei Hu
    • 1
  • Yu Xia
    • 1
  • Wei Peng
    • 1
  1. 1.School of Physics and Microelectronics ScienceHunan UniversityChangshaPeople’s Republic of China

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