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CMOS Technology

  • Heimo Uhrmann
  • Robert Kolm
  • Horst Zimmermann
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 45)

Abstract

The complementary metal oxide semiconductor technology, where the semiconductor is silicon, is the most rapidly developing high-tech fabrication technique. Products like mobile phones would not be affordable and their volume and weight would not be as small without modern CMOS processes. Modern deep-submicron and nanometer CMOS, however, is somewhat different to CMOS described in many textbooks. Full-custom design of analog circuits, which is essential for high-volume systems on chip as e.g. for mobile phones and smart phones, needs detailed knowledge of the CMOS process, of the devices being available in this process, and of the parasitics. In this chapter, the difficulties of scaling, the 120 nm CMOS, and the 65 nm low-power CMOS process used for the fabrication of the circuits introduced in this book will be described.

Keywords

Metal Layer CMOS Technology Analog Circuit CMOS Process Metal Insulator Metal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Heimo Uhrmann
    • 1
  • Robert Kolm
    • 1
  • Horst Zimmermann
    • 1
  1. 1.EMCEVienna University of TechnologyViennaAustria

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