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Abstract

Carrier mobility influenced by larger defects, such as dislocations, defect clusters; microcrystalline boundaries, external surfaces, metal/semiconductor boundaries, are all discussed quantitatively in this chapter.

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Notes

  1. 1.

    More sophisticated estimates (e.g., Fuchs 1938; Sondheimer 1952) are applied for thin metal layers, where surface-induced effects are less complex. These yield results on the same order of magnitude as given here.

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Böer, K.W. (2013). Carrier Mobility Influenced by Larger Defects. In: Handbook of the Physics of Thin-Film Solar Cells. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36748-9_18

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  • DOI: https://doi.org/10.1007/978-3-642-36748-9_18

  • Publisher Name: Springer, Berlin, Heidelberg

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