Abstract
Carrier scattering at low fields involve a large variety of scattering centers. Types of these scattering centeres are intrinsic lattice defects with acoustic or optical phonons, intrinsic point defects, alloys, extrinsic point defects with charged or neutral impurities; line defects; surface defects at grain boundaries, outer surfaces; metal/semiconductor interfaces. Three dimensional defects as atomic clusters or micro crystalline or colloidal inclusions; and secondary defects such as electron–electron scattering, electron–hole scattering or electron–plasmon scattering. Matthiessen rule is given. Intervalley and intravalley scattering and; warped surface effects are described. Quasi-particles as polarons or exciton interaction is discussed. Elastic and inelastic scattering is evaluated. Each of these scattering mechanisms are theoretically described. Phonon generation and annihilation is introduced. Longitudinal acoustic scattering are analyzed. Deformation potential table is given. Acoustic scattering with piezo electric interaction is shown. Optical phonon scattering in polar and non polar semiconductors are enumerated. Scattering by intrinsic point defects and by neutral defects, as well as by ionic defects are evaluated. Coulomb scattering in anisotropic semiconductors is discussed. Quantum correction for ion scattering is introduced. Carrier–carrier scattering is identified.
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Notes
- 1.
- 2.
The deformation potential is defined as the change in band gap per unit strain, and is typically on the order of 10 eV. For a listing, see Table 17.1.
- 3.
The experimentally observed exponent of T is −1.67 for Ge (Conwell 1952) and not −1.5. The exponent of T for Si is still larger (≈2.5). Inserting actual values for Si0 c I =1.56⋅1012 dyn/cm2, m n =0.2 m 0 and Ξ=9.5 eV), one obtains μ n =5,900 cm2/V s, a value that is larger by a factor of 4 than the measured μ n =1,500 cm2/V s at 300 K.
- 4.
K 2 can be expressed as the ratio of the mechanical to the total work in a piezoelectrical material: \(K^{2}=(e_{\mathrm{pz}}^{2}/c_{l}) /[\varepsilon \varepsilon _{0}+e_{\mathrm{pz}}^{2}/c_{l}]\), with e pz the piezoelectric constant (which is on the order of 10−5 As/cm2), and c l the longitudinal elastic constant (relating the tension \(\mathcal{T}\) to the stress \(\mathcal{S}\) and the electric field F as \(\mathcal{T}=c_{l}\mathcal{S}-e_{\mathrm{pz}}F\)).
- 5.
Here, \(F_{\mathrm{op}} \simeq1+\frac{2}{\beta}\ln(\beta +1)+1/(\beta+1)\), with β=(2|k|λ D )2, and λ D the Debye length given in Sect. A.3.
Bibliography
J. Appel, Phys. Rev. 122, 1760 (1961)
P.I. Baranskii, W.P. Klochkov, I.V. Potykievich, Semiconductor Electronics (Naukova Dumka, Kiev, 1975)
J. Bardeen, W. Shockley, Phys. Rev. 80, 72 (1950)
R.F. Bate, R.D. Baxter, F.J. Reid, A.C. Beer, J. Phys. Chem. Solids 26, 1205 (1965)
G.L. Bir, G.E. Pikus, in Symmetry and Strain Induced Effects in Semiconductors, ed. by D. Louvish (Wiley, New York, 1974)
A. Blacha, H. Presting, M. Cardona, Phys. Status Solidi B 124, 11 (1984)
L.E. Blagosklonskaya, E.I. Gershenzon, Yu.P. Ladyshinskii, A.P. Popova, Sov. Phys., Solid State 11, 2402 (1970)
P. Boguslawski, Phys. Status Solidi B 70, 54 (1975)
I.I. Boiko, Sov. Phys., Solid State 1, 518 (1959)
H. Brooks, Adv. Electron. Electron Phys. 7, 85 (1955)
D. Chattopadhyay, H.J. Queisser, Rev. Mod. Phys. 53, 745 (1981)
E.M. Conwell, Proc. IRE 40, 1327 (1952)
E.M. Conwell, High-Field Transport in Semiconductors (Academic Press, New York, 1967)
E.M. Conwell, V.F. Weisskopf, Phys. Rev. 77, 388 (1950)
M. Costato, L. Reggiani, J. Phys. C (London) 5, 158 (1972)
I.V. Dakhovskii, E.F. Mikhai, Fiz. Tverd. Tela 6, 3474 (1964)
P. Debye, E.M. Conwell, Phys. Rev. 93, 693 (1954)
K.M. Demchuk, I.M. Tsidilkovskii, Phys. Status Solidi B 82, 59 (1977)
V. Dienys, M.O. Kancleris, Phys. Status Solidi B 67, 317 (1975)
H. Ehrenreich, J. Appl. Phys. (Suppl.) 30, 2118 (1961)
C. Erginsoy, Phys. Rev. 79, 1013 (1950)
K. Fletcher, P.N. Butcher, J. Phys. C (London) 5, 212 (1972)
J. Ginter, J. Mycielski, J. Phys. C (London) 3, 11 (1970)
C. Herring, E. Vogt, Phys. Rev. 101, 944 (1956)
D.J. Howarth, E.H. Sondheimer, Proc. R. Soc. Lond. Ser. A, Math. Phys. Sci. 219, 53 (1953)
R.B. Leighton, Principles of Modern Physics (McGraw-Hill, New York, 1959)
O. Madelung, Introduction to Solid State Theory (Springer, Berlin, 1978)
D. Mattis, O. Sinha, Ann. Phys. 61, 214 (1970)
I.P. McKelvey, Solid State and Semiconductor Physics (Harper & Row, New York, 1966)
H.J.G. Meyer, Phys. Rev. 112, 298 (1958)
H.J.G. Meyer, D. Polder, Physica 19, 255 (1953)
T.K. Mitra, J. Phys. C (London) 2, 52 (1969)
E.J. Moore, Phys. Rev. 160, 607 (1967) and 618
T.N. Morgan, Proc. Int. Conf. Semicond. (Polish Scient., Warsaw, 1972)
T. Morimoto, K. Tani, J. Phys. Soc. Jpn. 17, 1121 (1962)
B.R. Nag, Electron Transport in Compound Semiconductors (Springer, Berlin, 1980)
B.R. Nag, Semiconductors Probed by Ultrafast Laser Spectroscopy, vol. 1 (Academic Press, New York, 1984), p. 3
J.C. Nash, J.W. Holm-Kennedy, Appl. Phys. Lett. 24, 139 (1974)
P. Norton, H. Levinstein, Phys. Rev. B 6, 470 (1972)
A. Raymond, J.L. Robert, B. Pistoulet, in Proc. Int. Conf. on GaAs and Related Compounds, ed. by C. Hilsum (Institute of Physics, London, 1977)
D.L. Rode, S. Knight, Phys. Rev. B 3, 2534 (1971)
E. Rutherford, Philos. Mag. 21, 669 (1911)
A.G. Samoilovich, I.Ya. Korenblit, I.V. Dakovskii, V.D. Iskra, Sov. Phys., Solid State 3, 2148 (1961), and 2385
K. Seeger, Semiconductor Physics (Springer, New York, 1973)
G.E. Stillman, C.M. Wolfe, J.O. Dimmock, J. Phys. Chem. Solids 31, 1199 (1970)
W. Zawadzki, in Proc. 11th Int. Conf. Phys. Semicond. (Polish Scient., Warsaw, 1972)
W. Zawadzki, in Handbook on Semiconductors, ed. by T.S. Moss, W. Paul. Band Theory and Transport Properties, vol. 1 (North-Holland, Amsterdam, 1980/1982)
W. Zawadzki, W. Szymanska, Phys. Status Solidi B, Basic Solid State Phys. 45, 415 (1971)
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Böer, K.W. (2013). Carrier Scattering at Low Fields. In: Handbook of the Physics of Thin-Film Solar Cells. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36748-9_17
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