Abstract
Defects in associates interact with each other and present a spectrum of new levels in the band gap, such as pairs, specifically donor/acceptor pairs. Examples are given Chalcogen and hydrogen pairs in Si are discussed, their energy is tabulated. Triple and higher defects are discussed. Defect clusters due to radiation damage are given. Measured atomic displacement energies are tabulated. Electron damage in II–VI compounds is given as example.
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Böer, K.W. (2013). Defect Associates. In: Handbook of the Physics of Thin-Film Solar Cells. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36748-9_11
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