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High Permittivity Gate Dielectric Materials pp 283–308Cite as

Channel Mobility

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Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 43))

Abstract

Effective channel mobility, μeff, of high-k gate dielectrics in various device technologies is discussed in detail. Initially, the background on mobility is provided with brief explanations on different scattering mechanisms. Next, the fast transient charge trapping effect, seen in hafnium-based dielectric films, is explained in conjunction with the pulse I–V technique, which is used to quantify the fast trapping. This fast trapping is shown to degrade device performance and thereby degrade the μeff. Then, how the components of high-k gate dielectric stack structure (i.e., interfacial layer quality and composition, high-k layer thickness and Hf content) affects the fast trapping is discussed. It is shown that increases in high-k layer thickness or Hf content lead to mobility degradation due to increased levels of fast trapping. However, an increase in the thickness of the interfacial layer, that screens the high-k dielectric from the device channel, can dramatically improve the mobility. Unfortunately, increasing the equivalent oxide thickness may not be ideal for some logic technologies. In order to understand the factors, there is a need to extract the mobility in the presence of fast trapping. Several methodologies of μeff extraction that remove the fast transient contribution to the μeff are discussed. Finally, the chapter discusses future technology possibilities: substrate orientation dependent mobility enhancement, process induced strain, germanium-based channels, and compound semiconductor substrates. All approaches demonstrate mobility enhancement over standard bulk silicon substrates, but they can also introduce other aspects of mobility degradation.

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  1. Materials Science and Engineering Department, University of Texas at Dallas, 800 W. Campbell Road, RL 10, Richardson, TX, 75080, USA

    Chadwin Young

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  1. Dept. Electrical Engineering, Indian Institute of Technology, Kanpur, 208016, India

    Samares Kar

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Young, C. (2013). Channel Mobility. In: Kar, S. (eds) High Permittivity Gate Dielectric Materials. Springer Series in Advanced Microelectronics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36535-5_7

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