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Hf-Based High-k Gate Dielectric Processing

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High Permittivity Gate Dielectric Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 43))

Abstract

This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin film is introduced followed by detail study of these films from the materials science point of view, such as its crystallization and its control, carrier trapping and doping effect on the bulk high-k film. Finally, the device processing of the Field Effect Transistor including the CMOSFET with Hf-based high-k gate dielectric and metal gate electrode is discussed.

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Authors and Affiliations

  1. Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, 980-0077, Japan

    Masaaki Niwa

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  1. Masaaki Niwa
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Correspondence to Masaaki Niwa .

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  1. Dept. Electrical Engineering, Indian Institute of Technology, Kanpur, 208016, India

    Samares Kar

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Niwa, M. (2013). Hf-Based High-k Gate Dielectric Processing. In: Kar, S. (eds) High Permittivity Gate Dielectric Materials. Springer Series in Advanced Microelectronics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36535-5_4

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  • DOI: https://doi.org/10.1007/978-3-642-36535-5_4

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  • Print ISBN: 978-3-642-36534-8

  • Online ISBN: 978-3-642-36535-5

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