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Hafnium-Based Gate Dielectric Materials

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High Permittivity Gate Dielectric Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 43))

Abstract

In this chapter, we focus on hafnium-based gate dielectrics. HfO2 is regarded as the most promising material for the high–k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO2, transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter.

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  1. Corporate R&D Center, Toshiba Corporation, 1 Komukai-toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan

    Akira Nishiyama

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  1. Dept. Electrical Engineering, Indian Institute of Technology, Kanpur, 208016, India

    Samares Kar

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Nishiyama, A. (2013). Hafnium-Based Gate Dielectric Materials. In: Kar, S. (eds) High Permittivity Gate Dielectric Materials. Springer Series in Advanced Microelectronics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36535-5_3

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