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Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications

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High Permittivity Gate Dielectric Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 43))

Abstract

We first discuss HfO2-based ternary high-k dielectric films. We emphasize that ternary materials do not only exhibit average properties expected by the mean-media model, but that they also reveal unexpected properties due to structural phase transformation. We also discuss La2O3-based ternary high-k films, where dopant atoms play a key role in stabilizing the hexagonal phase that is inherently the high-k phase of La2O3. Finally, ternary dielectrics for preparing amorphous gate insulators are discussed from the viewpoint of forming random network structure and suppressing long-range ordering. Understanding of ternary systems will hopefully guide us to higher-k dielectric materials and/or those that are highly reliable.

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Acknowledgments

This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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Authors and Affiliations

  1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo, 113-8656, Japan

    Akira Toriumi & Koji Kita

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  1. Akira Toriumi
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  2. Koji Kita
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Correspondence to Akira Toriumi .

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Editors and Affiliations

  1. Dept. Electrical Engineering, Indian Institute of Technology, Kanpur, 208016, India

    Samares Kar

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Toriumi, A., Kita, K. (2013). Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications. In: Kar, S. (eds) High Permittivity Gate Dielectric Materials. Springer Series in Advanced Microelectronics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36535-5_10

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  • DOI: https://doi.org/10.1007/978-3-642-36535-5_10

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