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Fernziele der Nanoelektronik

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Book cover Nanoelektronik

Part of the book series: acatech DISKUSSION ((ACATECHDISKUSSION))

Zusammenfassung

Während der vergangenen vierzig Jahre folgte die Entwicklung der Mikroelektronik dem Moore#x2019;schen Gesetz, einem empirischen Gesetz, welches vorhersagt, dass sich die Bauelementedichte und die Leistungsfähigkeit monolithisch integrierter Siliziumschaltkreise in zeitlichen Abständen von 18 Monaten jeweils verdoppeln.1 Während dieser vierzig Jahre verringerten sich die Strukturgrößen von Transistoren von 10 Mikrometer auf etwa 30 Nanometer. In den letzten 25 Jahren entwickelte sich die siliziumbasierte komplementäre Metalloxid-Halbleitertechnologie (CMOS) zur Mainstreamtechnologie für digitale, analoge und Mixed-Signal-Anwendungen.

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  1. Peter Russer
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  2. Paolo Lugli
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  3. Karl Hess
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  4. Johannes Russer
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  5. Giuseppe Scarpa
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Editors and Affiliations

  1. Institut für Nanoelektronik, Technische Universität München, Arcisstraße 21, 80333, München, Germany

    Peter Russer

  2. Lehrstuhl für Nanoelektronik, Technische Universität München, Arcisstraße 21, 80333, München, Germany

    Paolo Lugli

  3. acatech — Deutsche Akademie der Technikwissenschaften, Residenz München Hofgartenstraße 2, 80539, München, Germany

    Marc-Denis Weitze

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© 2013 Springer-Verlag Berlin Heidelberg

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Russer, P., Lugli, P., Hess, K., Russer, J., Scarpa, G. (2013). Fernziele der Nanoelektronik. In: Russer, P., Lugli, P., Weitze, MD. (eds) Nanoelektronik. acatech DISKUSSION. Springer Vieweg, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35791-6_12

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