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Fabrication of Ultrahigh-Density Self-assembled InAs Quantum Dots by Strain Compensation

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Progress in Nanophotonics 2

Part of the book series: Nano-Optics and Nanophotonics ((NON))

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Abstract

A fabrication method of semiconductor quantum dots (QDs), which is an important fundamental technology for realizing high-performance QD optical devices, is discussed in this chapter. In the first section, we introduce self-assembly of InAs QDs based on the Stranski-Krastanov growth mode. In the second section, we discuss the fabrication of ultrahigh-density QDs by a strain compensation technique. Finally, we present applications using the ultrahigh-density QDs, in particular, various unique properties of a highly stacked InAs QD laser diode.

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Authors and Affiliations

  1. National Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo, 184-8795, Japan

    Kouichi Akahane

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  1. Kouichi Akahane
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Correspondence to Kouichi Akahane .

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Editors and Affiliations

  1. , Graduate School of Engineering, The University of Tokyo, Yayoi, Bunkyo-ku 2-11-16, Tokyo, 113-8656, Japan

    Motoichi Ohtsu

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Akahane, K. (2013). Fabrication of Ultrahigh-Density Self-assembled InAs Quantum Dots by Strain Compensation. In: Ohtsu, M. (eds) Progress in Nanophotonics 2. Nano-Optics and Nanophotonics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35719-0_3

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