Abstract
In this chapter we review the results of isotopic fingerprints obtained using highly enriched \(^{28}\)Si. Although some results have been published before [1–7], many new details are presented here. The subsections are organized in a partially historical way, following the developments as various, previously known and new centres were studied in \(^{28}\)Si. This chapter is also organized in a way that anticipates our proposal that the four- and five-atom containing TM centres have, at their core, a substitutional TM, surrounded by interstitial TM, usually Cu, but also Ag or the non-TM Li. This model clearly does not apply to the S-containing \({\text{ S}_\text{ A}}\) and \({\text{ S}_\text{ B}}\) centres, which are included because they are IBE centres that also contain Cu.
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Steger, M. (2013). Results. In: Transition-Metal Defects in Silicon. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35079-5_4
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