Abstract
This paper presents detailed procedure of genetic neural networks modeling and application of this approach on GaN high electron mobility transistors (HEMTs). The developed model has been validated by RF large-signal measurements of the considered devices. The model shows very good capability for simulating the nonlinear behavior of the devices with higher rate of convergence.
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Jarndal, A. (2012). Application of Genetic Neural Networks for Modeling of Active Devices. In: Huang, T., Zeng, Z., Li, C., Leung, C.S. (eds) Neural Information Processing. ICONIP 2012. Lecture Notes in Computer Science, vol 7666. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34478-7_29
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DOI: https://doi.org/10.1007/978-3-642-34478-7_29
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-34477-0
Online ISBN: 978-3-642-34478-7
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