Abstract
An effective electron–hole separation at a Schottky contact or p–n junction is important for the efficiency of a photon detector. In this chapter, we demonstrate how the piezo-phototronic effect can be used to largely improve the responsivity of a photon detector in a whole range from visible to UV. After a systematic study on the Schottky barrier height change with tuning the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than fivefold for pW levels light detection.
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References
Q. Yang, X. Guo, W.H. Wang, Y. Zhang, S. Xu, D.H. Lien, Z.L. Wang, Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect. ACS Nano 4(10), 6285–6291 (2010)
Z.W. Pan, Z.R. Dai, Z.L. Wang, Nanobelts of semiconducting oxides. Science 291, 1947–1949 (2001)
J. Zhou, P. Fei, Y.D. Gu, W.J. Mai, Y.F. Gao, R.S. Yang, G. Bao, Z.L. Wang, Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires. Nano Lett. 8(11), 3973–3977 (2008)
J. Zhou, Y.D. Gu, Y.F. Hu, W.J. Mai, P.H. Yeh, G. Bao, A.K. Sood, D.L. Polla, Z.L. Wang, Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization. Appl. Phys. Lett. 94(19), 191103 (2009)
T.Y. Wei, C.T. Huang, B.J. Hansen, Y.F. Lin, L.J. Chen, S.Y. Lu, Z.L. Wang, Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors. Appl. Phys. Lett. 96(1), 013508 (2010)
R.R. Mehta, B.S. Sharma, Photoconductive gain greater than unity in CdSe films with Schottky barriers at the contacts. J. Appl. Phys. 44(1), 325–328 (1973)
S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)
J.W. Schwede, I. Bargatin, D.C. Riley, B.E. Hardinm, S.J. Rosenthal, Y. Sun, F. Schmitt, P. Pianetta, R.T. Howe, Z. Shen, N.A. Melosh, Photon-enhanced thermionic emission for solar concentrator systems. Nat. Mater. 9, 762–767 (2010)
K.W. Chung, Z. Wang, J.C. Costa, F. Williamson, P.P. Ruden, M.I. Nathan, Barrier height change in GaAs Schottky diodes induced by piezoelectric effect. Appl. Phys. Lett. 59(10), 1191–1193 (1991)
W. Shan, M.F. Li, P.Y. Yu, W.L. Hansen, W. Walukiewicz, Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Appl. Phys. Lett. 53(11), 974–976 (1988)
Y. Liu, Q. Yang, Y. Zhang, Y.Z. Yang, Z.L. Wang, Nanowire piezo-phototronic photodetector: theory and experimental design. Adv. Mater. 24(11), 1410–1417 (2012)
P.W. Bridgman, The effect of homogeneous mechanical stress on the electrical resistance of crystals. Phys. Rev. 42(6), 858–863 (1932)
C.S. Smith, Piezoresistance effect in germanium and silicon. Phys. Rev. 94(1), 42–49 (1954)
H. Norde, A modified forward I–V plot for Schottky diodes with high series resistance. J. Appl. Phys. 50(7), 5052–5053 (1979)
C.D. Lien, F.C.T. So, M.A. Nicolet, An improved forward I–V method for nonideal Schottky diodes with high series resistance. IEEE Trans. Electron Devices 31, 1502–1503 (1984)
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Wang, Z.L. (2012). Piezo-Phototronic Effect on Photodetector. In: Piezotronics and Piezo-Phototronics. Microtechnology and MEMS. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34237-0_9
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DOI: https://doi.org/10.1007/978-3-642-34237-0_9
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-34236-3
Online ISBN: 978-3-642-34237-0
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