Abstract
The most fundamental physics for piezotronics and piezo-phototronics is in the presence of a piezoelectric potential (piezopotential) in semiconductor structured materials, such as the wurtzite structure. This chapter introduces the fundamental theory for calculating the piezopotential distribution in nanostructures with and without considering the presence of doping. The finite conductivity possessed by the material can partially screen the regional piezopotential having an opposite polarity to the type of doping, but cannot completely cancel the polarization charge due to the dielectric property of the material and the moderate doping level. The effect of piezopotential on the local contact in electrical measurements is also discussed, and a through-end model is proposed for understanding the transport properties of nanowire-based devices. This model will be adopted in future chapters for understanding the I–V characteristics of the devices.
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References
H.J. Xiang, J.L. Yang, J.G. Hou, Q.S. Zhu, Piezoelectricity in ZnO nanowires: a first-principles study. Appl. Phys. Lett. 89(22), 223111 (2006)
Z.C. Tu, X. Hu, Elasticity and piezoelectricity of zinc oxide crystals, single layers, and possible single-walled nanotubes. Phys. Rev. B 74(3), 035434 (2006)
A.J. Kulkarni, M. Zhou, F.J. Ke, Orientation and size dependence of the elastic properties of zinc oxide nanobelts. Nanotechnology 16(12), 2749–2756 (2005)
P.J. Michalski, N. Sai, E.J. Mele, Continuum theory for nanotube piezoelectricity. Phys. Rev. Lett. 95(11), 116803 (2005)
Z.L. Wang, X.Y. Kong, Y. Ding, P.X. Gao, W.L. Hughes, R.S. Yang, Y.S. Zhang, Semiconducting and piezoelectric oxide nanostructures induced by polar surfaces. Adv. Funct. Mater. 14(10), 943–956 (2004)
J.F. Nye, Physical Properties of Crystals (Oxford University Press, Oxford, 1957)
Q.H. Qin, Fracture Mechanics of Piezoelectric Materials (WIT Press, Southampton, 2001)
Y.F. Gao, Z.L. Wang, Electrostatic potential in a bent Piezoelectric nanowire. The fundamental theory of nanogenerator and nanopiezotronics. Nano Lett. 7(8), 2499–2505 (2007)
R.W. Soutas-Little, Elasticity (Dover, Mineola, 1999)
J. Zhou, P. Fei, Y.F. Gao, Y.D. Gu, J. Liu, G. Bao, Z.L. Wang, Mechanical–electrical triggers and sensors using piezoelectric micowires/nanowires. Nano Lett. 8(9), 2725–2730 (2008)
Z.Y. Gao, J. Zhou, Y.D. Gu, P. Fei, Y. Hao, G. Bao, Z.L. Wang, Effects of piezoelectric potential on the transport characteristics of metal–ZnO nanowire–metal field effect transistor. J. Appl. Phys. 105(11), 113707 (2009)
C.S. Lao, J. Liu, P.X. Gao, L.Y. Zhang, D. Davidovic, R. Tummala, Z.L. Wang, ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across Au electrodes. Nano Lett. 6(2), 263–266 (2006)
Y.F. Gao, Z.L. Wang, Equilibrium potential of free charge carriers in a bent piezoelectric semiconductive nanowire. Nano Lett. 9(3), 1103–1110 (2009)
F. Sacconi, A. Di Carlo, P. Lugli, H. Morkoc, Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs. IEEE Trans. Electron Devices 48(3), 450–457 (2001)
W. Shan, W. Walukiewicz, J.W. Ager, K.M. Yu, Y. Zhang, S.S. Mao, R. Kling, C. Kirchner, A. Waag, Pressure-dependent photoluminescence study of ZnO nanowires. Appl. Phys. Lett. 86(15), 153117 (2005)
G. Mantini, Y.F. Gao, A. D’Amico, C. Falconi, Z.L. Wang, Equilibrium piezoelectric potential distribution in a deformed ZnO nanowire. Nano Res. 2, 624–629 (2009)
M.P. Lu, J.H. Song, M.Y. Lu, M.T. Chen, Y.F. Gao, L.F. Chen, Z.L. Wang, Piezoelectric nanogenerator using p-type ZnO nanowire arrays. Nano Lett. 9(3), 1223–1227 (2009)
Y. Zhang, Y.F. Hu, S. Xiang, Z.L. Wang, Effects of piezopotential spatial distribution on local contact dictated transport property of ZnO micro/nanowires. Appl. Phys. Lett. 97(3), 033509 (2010)
G.A. Maugin, Continuum Mechanics of Electromagnetic Solids (North-Holland, Amsterdam, 1988)
R.W. Soutas-Little, Elasticity, vol. XVI (Dover, Mineola, 1999), p. 431
K.W. Chung, Z. Wang, J.C. Costa, F. Williamsion, P.P. Ruden, M.I. Nathan, Barrier height change in GaAs Schottky diodes induced by piezoelectric effect. Appl. Phys. Lett. 59(10), 1191 (1991)
S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)
J.H. Song, Y. Zhang, C. Xu, W.Z. Wu, Z.L. Wang, Polar charges induced electric hysteresis of ZnO nano/microwire for fast data storage. Nano Lett. 11(7), 2829–2834 (2011)
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Wang, Z.L. (2012). Piezopotential in Wurtzite Semiconductors. In: Piezotronics and Piezo-Phototronics. Microtechnology and MEMS. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34237-0_2
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DOI: https://doi.org/10.1007/978-3-642-34237-0_2
Publisher Name: Springer, Berlin, Heidelberg
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