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MOVPE Processes

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Design and Realization of Novel GaAs Based Laser Concepts

Part of the book series: Springer Theses ((Springer Theses))

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Abstract

This chapter discusses the influence of individual QD growth parameters and stacking challenges, along with the material quality and doping levels used for laser device growth. Long wavelength InGaAs QD growth process optimization for applications at \(1.3\,\upmu \mathrm{{m}}\) is investigated. Notably, the role of the V/III ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.

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  1. Institut für Festkörperphysik, Sekretariat EW 5-2, Technische Universität Berlin, Hardenbergstr. 36, 10623, Berlin, Germany

    Tim David Germann

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Germann, T. (2012). MOVPE Processes. In: Design and Realization of Novel GaAs Based Laser Concepts. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34079-6_4

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