Abstract
Fundamentals of GaAs-based laser designs and the investigated (In)(Ga)As gain media concepts are discussed within this chapter. (Al)GaAs is the material system which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (Al)GaAs forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.
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Germann, T.D. (2012). Semiconductor Laser Concepts. In: Design and Realization of Novel GaAs Based Laser Concepts. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34079-6_2
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DOI: https://doi.org/10.1007/978-3-642-34079-6_2
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