Abstract
A short introduction on the history of laser development leading to first quantum dot lasers is given. Research goals of this work are motivated and key challenges are identified. Principal achievements are summarized and the outline of this thesis is presented.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
G. Gould, in The LASER, light amplification by stimulated emission of radiation. The Ann Arbor Conference on Optical Pumping (1959)
A. Schawlow, C. Townes, Infrared and optical masers. Phys. Rev. 112(6), 1940 (1958). ISSN 0031–899X
T.H. Maiman, Stimulated optical radiation in ruby. Nature 187(4736), 493 (1960). ISSN 0028–0836
H. Kroemer, A proposed class of hetero-junction injection lasers. Proc. IEEE 5(12), 1782 (1963). ISSN 0018–9219
Z.I. Alferov, V.M. Andreev, V.I. Korolkov, E.L. Portnoi, D.N. Tretyako, Coherent radiation of epitaxial heterojunction structures in AlAs-GaAs system. Sov. Phys. Semicond. USSR 2(10), 1289 (1969). ISSN 0038–5700
Z.I. Alferov, V.M. Andreev, D.Z. Garbuzov, Y.V. Zhilyaev, E.P. Morozov, E.L. Portnoi, V.G. Trofim, Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and realization of continuous emsission at room temperature. Sov. Phys. Semicond. USSR 4(9), 1573 (1971). ISSN 0038–5700
N. Kirstaedter, N. Ledentsov, M. Grundmann, V. Bimberg, D. Ustinov, S. Ruvimov, M. Maximov, P. Kop’ev, Z. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich, Low threshold, large \(T_0\) injection laser emission from (InGa)As quantumdots. El. Lett. 30(17), 1416 (1994)
Y. Arakawa, Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett. 40(11), 939 (1982). ISSN 00036951
M. Asada, Y. Miyamoto, Y. Suematsu, Gain and the threshold of three-dimensional quantum-box lasers. IEEE J. Quantum Electron. 22(9), 1915 (1986). ISSN 0018–9197
I.N. Stranski, L. Krastanow, Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander. Monatshefte für Chemie / Chem. Mon. 71, 351 (1938). ISSN 0026–9247
F. Hopfer, A. Mutig, G. Fiol, M. Kuntz, V. Shchukin, V. Haisler, T. Warming, E. Stock, S. Mikhrin, I. Krestnikov, D. Livshits, A. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dahne, N. Ledentsov, D. Bimberg, 20 Gb/s 85\(^{\circ }\)C error-free operation of VCSELs based on submonolayer deposition of quantum dots, selected topics in quantum electronics. IEEE J. 13(5), 1302 (2007). ISSN 1077–260X
T.D. Germann, A. Strittmatter, J. Pohl, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov, High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots. Appl. Phys. Lett. 92(10), 101123 (2008)
D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, D.G. Deppe, 1.3 \(\mu \)m room-temperature GaAs-based quantum-dot laser. Appl. Phys. Lett. 73(18), 2564 (1998). ISSN 00036951
K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, H. Ishikawa, 1.3-\(\mu \)m CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA. IEEE Photonics Technol. Lett. 11(10), 1205 (1999). ISSN 10411135
J. Lott, N. Ledentsov, V. Ustinov, N. Maleev, A. Zhukov, A. Kovsh, M. Maximov, B. Volovik, Z. Alferov, D. Bimberg, InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m. Electron. Lett. 36(16), 1384 (2000). ISSN 00135194
D. Guimard, Y. Arakawa, M. Ishida, S. Tsukamoto, M. Nishioka, Y. Nakata, H. Sudo, T. Yamamoto, M. Sugawara, Ground state lasing at 1.34 \(\mu \)m from InAs/GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition. Appl. Phys. Lett. 90(24), 241110 (2007)
D. Guimard, M. Ishida, N. Hatori, Y. Nakata, H. Sudo, T. Yamamoto, M. Sugawara, Y. Arakawa, CW lasing at 1.35 \(\mu \)m from ten InAs-Sb:GaAs quantum-dot layers grown by metal-organic chemical vapor deposition. Photonics Technol. Lett. IEEE 20(10), 827 (2008). ISSN 1041–1135
M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM\(_{00}\) beams. IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999)
A.C. Tropper, H.D. Foreman, A. Garnache, K.G. Wilcox, S.H. Hoogland, Vertical-external-cavity semiconductor lasers. J. Phys. D 37, R75 (2004)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2012 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Germann, T.D. (2012). Introduction. In: Design and Realization of Novel GaAs Based Laser Concepts. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34079-6_1
Download citation
DOI: https://doi.org/10.1007/978-3-642-34079-6_1
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-34078-9
Online ISBN: 978-3-642-34079-6
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)