Abstract
Mathematical modeling has been used routinely in the design and analysis of semiconductor radiation detectors because it saves development time in the initial stages and saves the manufacturing cost as a whole. Moreover, one can easily change parameters, such as trapping and de-trapping times (τ t, τ D), electric field strengths (ε), electron–hole mobility (μ n, μ h), and electrode designs, during computer simulation and can minimize the polarization and maximize overall detection efficiency (η) of the detector without spending much time in the laboratory. Thus, during computer simulation, these parameters are changed partially or fully until the model spectrum matches closely to the real spectrum [1, 2].
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Gupta, T.K. (2013). Mathematical Modeling of Radiation. In: Radiation, Ionization, and Detection in Nuclear Medicine. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34076-5_3
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