Abstract
Topological Anderson insulator is a distinct type of topological insulator, which is induced by the disorders. Its key difference from the conventional topological insulators is that its Fermi energy lies within a so-called mobility gap instead of a “real” band gap. The robustness of the edge or surface states is protected by the mobility gap.
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Shen, SQ. (2012). Topological Anderson Insulator. In: Topological Insulators. Springer Series in Solid-State Sciences, vol 174. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-32858-9_11
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DOI: https://doi.org/10.1007/978-3-642-32858-9_11
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