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Ion Implantation

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Mössbauer Spectroscopy

Abstract

In this tutorial we describe the basic principles of the ion implantation technique and we demonstrate that emission Mössbauer spectroscopy is an extremely powerful technique to investigate the atomic and electronic configuration around implanted atoms. The physics of dilute atoms in materials, the final lattice sites and their chemical state as well as diffusion phenomena can be studied. We focus on the latest developments of implantation Mössbauer spectroscopy, where three accelerator facilities, i.e., Hahn-Meitner Institute Berlin, ISOLDE-CERN and RIKEN, have intensively been used for materials research in in-beam and on-line Mössbauer experiments immediately after implantation of the nuclear probes.

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Authors and Affiliations

  1. Department of Physics and Astronomy, University of Leuven, Institute of Nuclear and Radiation Physics, Celestijnenlaan 200D, BE-3001, Leuven, Belgium

    G. Langouche

  2. Shizuoka Institute of Science and Technology, Toyosawa 2200-2, Fukuroi-city, Shizuoka, 437-8555, Japan

    Y. Yoshida

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  1. G. Langouche
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  2. Y. Yoshida
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Correspondence to G. Langouche .

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Editors and Affiliations

  1. of Science and Technology, Shizuoka Institute, Toyosawa 2200-2, Fukuroi, 437-8555, Japan

    Yutaka Yoshida

  2. Physics Department, Institute for Nuclear and Rad. Physics, Celestijnenlaan 200D, Leuven, 3001, Belgium

    Guido Langouche

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Langouche, G., Yoshida, Y. (2013). Ion Implantation. In: Yoshida, Y., Langouche, G. (eds) Mössbauer Spectroscopy. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-32220-4_6

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  • DOI: https://doi.org/10.1007/978-3-642-32220-4_6

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-32219-8

  • Online ISBN: 978-3-642-32220-4

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